18601074. GATE-ALL-AROUND DEVICE WITH DIFFERENT CHANNEL SEMICONDUCTOR MATERIALS AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

GATE-ALL-AROUND DEVICE WITH DIFFERENT CHANNEL SEMICONDUCTOR MATERIALS AND METHOD OF FORMING THE SAME

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Jhe-Ching Lu of Tainan City (TW)

Yen-Sen Wang of Hsinchu County (TW)

Bao-Ru Young of Hsinchu County (TW)

Tsung-Chieh Tsai of Hsin-Chu County (TW)

GATE-ALL-AROUND DEVICE WITH DIFFERENT CHANNEL SEMICONDUCTOR MATERIALS AND METHOD OF FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18601074 titled 'GATE-ALL-AROUND DEVICE WITH DIFFERENT CHANNEL SEMICONDUCTOR MATERIALS AND METHOD OF FORMING THE SAME

Simplified Explanation

The patent application describes a method for manufacturing a semiconductor device by forming multiple semiconductor layers on a substrate and then patterning them to create specific structures.

• The method involves depositing different semiconductor materials in alternating layers on the substrate.
• The layers are then planarized and patterned to form distinct semiconductor structures in different areas of the substrate.

Key Features and Innovation

• Formation of semiconductor layers with different materials in a specific pattern.
• Patterning the layers to create customized semiconductor structures.

Potential Applications

This technology can be used in the manufacturing of various semiconductor devices such as integrated circuits, sensors, and transistors.

Problems Solved

This method allows for the precise control and customization of semiconductor structures, enabling the creation of complex electronic devices.

Benefits

• Enhanced performance and functionality of semiconductor devices.
• Improved efficiency in semiconductor manufacturing processes.

Commercial Applications

• Semiconductor manufacturing industry
• Electronics industry
• Research and development in semiconductor technology

Prior Art

Researchers can explore prior patents related to semiconductor device manufacturing methods, materials, and patterning techniques.

Frequently Updated Research

Researchers may find updated studies on semiconductor materials, device structures, and manufacturing processes relevant to this technology.

Questions about Semiconductor Device Manufacturing

1. How does the use of different semiconductor materials in alternating layers affect the performance of the device? 2. What are the potential challenges in scaling up this manufacturing method for mass production?

Original Abstract Submitted

Semiconductor device and the manufacturing method thereof are disclosed. An exemplary method comprises forming a first semiconductor layer including a first semiconductor material in a first area of a substrate; alternately depositing second semiconductor layers and third semiconductor layers over the first semiconductor layer and over the substrate to form a semiconductor layer stack, wherein the second semiconductor layers include a second semiconductor material, the third semiconductor layers include the first semiconductor material, the second semiconductor material is different from the first semiconductor material, and a bottom surface of one of the second semiconductor layers contacts the first semiconductor layer in the first area and contacts the substrate in a second area of the substrate; planarizing a top surface of the semiconductor layer stack; and patterning the semiconductor layer stack to form a first semiconductor structure in the first area and a second semiconductor structure in the second area.