18601068. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE simplified abstract (SK hynix Inc.)
Contents
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Ki Hong Lee of Icheon-si Gyeonggi-do (KR)
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18601068 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract features a gate stack composed of conductive and insulating layers stacked alternately, a first channel pattern passing through the gate stack, a second channel pattern connected to the first channel pattern and protruding above the gate stack's top surface, an insulating core within the first channel pattern extending into the second channel pattern, a gate liner surrounding the gate stack's top surface and a portion of the second channel pattern's sidewall, and a barrier pattern surrounding the remaining portion of the second channel pattern's sidewall.
- The device includes a complex gate structure with multiple layers for improved performance.
- The first and second channel patterns enhance the device's functionality and efficiency.
- The insulating core and gate liner provide insulation and protection for the device.
- The barrier pattern further enhances the device's structural integrity and performance.
- Overall, the device's design aims to optimize its operation and reliability.
Potential Applications: - This technology can be applied in various semiconductor devices such as transistors and integrated circuits. - It can be used in electronic devices like smartphones, computers, and other consumer electronics. - The technology may find applications in industrial automation, automotive electronics, and telecommunications.
Problems Solved: - Addresses the need for improved performance and efficiency in semiconductor devices. - Provides enhanced insulation and protection for sensitive components. - Optimizes the device's structural integrity and reliability.
Benefits: - Improved performance and efficiency in semiconductor devices. - Enhanced insulation and protection for sensitive components. - Optimal structural integrity and reliability for long-term use.
Commercial Applications: - The technology can be utilized by semiconductor manufacturers to enhance the performance of their devices. - It can lead to the development of more advanced and reliable electronic products for consumers. - The innovation may have significant market implications in the semiconductor industry, driving advancements in technology.
Questions about the technology: 1. How does the complex gate structure contribute to the device's performance? 2. What are the specific advantages of the insulating core and gate liner in the semiconductor device?
Frequently Updated Research: - Stay updated on the latest advancements in semiconductor technology to understand how this innovation fits into the current landscape.
Original Abstract Submitted
A semiconductor device includes a gate stack with conductive layers and insulating layers that are stacked alternately with each other, a first channel pattern passing through the gate stack, a second channel pattern coupled to the first channel pattern, the second channel pattern protruding above a top surface of the gate stack, an insulating core formed in the first channel pattern, the insulating core extending into the second channel pattern, a gate liner with a first portion that surrounds a top surface of the gate stack and a second portion that surrounds a portion of a sidewall of the second channel pattern, and a barrier pattern coupled to the gate liner, the barrier pattern surrounding a remaining portion of the sidewall of the second channel pattern.
