18601032. SEMICONDUCTOR MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Hyungsuk Jung of Suwon-si (KR)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18601032 titled 'SEMICONDUCTOR MEMORY DEVICE
The semiconductor memory device described in the abstract consists of an upper electrode, a lower electrode, an anti-ferroelectric layer with an anti-ferroelectric material, an oxide layer with a high dielectric material on one surface of the anti-ferroelectric layer, and a metal oxide layer on the opposite surface of the anti-ferroelectric layer. The oxide layer and metal oxide layer are thinner than the anti-ferroelectric layer.
- The semiconductor memory device includes an anti-ferroelectric layer with an anti-ferroelectric material.
- The device also features an oxide layer with a high dielectric material.
- A metal oxide layer is present on the opposite surface of the anti-ferroelectric layer.
- The thickness of the oxide layer and metal oxide layer is less than the thickness of the anti-ferroelectric layer.
- This configuration enhances the performance and efficiency of the semiconductor memory device.
Potential Applications: - This technology can be used in various memory storage devices. - It can also be applied in electronic devices requiring high-speed data processing.
Problems Solved: - Improved performance and efficiency of semiconductor memory devices. - Enhanced data storage capabilities.
Benefits: - Higher data processing speeds. - Increased memory storage capacity. - Improved overall performance of electronic devices.
Commercial Applications: Title: Advanced Semiconductor Memory Technology for Enhanced Data Processing This technology can be utilized in the development of faster and more efficient memory storage devices for consumer electronics, data centers, and other high-tech applications. The market implications include improved data processing speeds, increased storage capacities, and enhanced overall performance of electronic devices.
Questions about Semiconductor Memory Device: 1. How does the anti-ferroelectric layer contribute to the performance of the semiconductor memory device? The anti-ferroelectric layer helps in enhancing the efficiency and data storage capabilities of the device by utilizing its unique properties for data retention and processing.
2. What are the potential commercial applications of this advanced semiconductor memory technology? The technology can be applied in various electronic devices, data centers, and high-tech applications to improve data processing speeds and storage capacities.
Original Abstract Submitted
A semiconductor memory device includes an upper electrode, a lower electrode, an anti-ferroelectric layer disposed between the upper electrode and the lower electrode and including an anti-ferroelectric, an oxide layer disposed on a first surface of the anti-ferroelectric layer and including a high dielectric material, and a metal oxide layer disposed on a second surface of the anti-ferroelectric layer opposite to the first surface. A thickness of each of the oxide layer and the metal oxide layer is less than a thickness of the anti-ferroelectric layer.
