18601027. SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME
Organization Name
Inventor(s)
Seonghun Jeong of Hwaseong-si (KR)
Byoungil Lee of Hwaseong-si (KR)
Joonhee Lee of Seongnam-si (KR)
SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18601027 titled 'SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME
The semiconductor device described in the abstract consists of a peripheral circuit structure with circuit elements on a first substrate, and a memory cell structure with a second substrate, horizontal conductive layers, gate electrodes, channel structures, and separation regions.
- The memory cell structure is connected to the peripheral circuit structure through a through-wiring region with a through-contact plug.
- The separation regions in the memory cell structure include first separation regions adjacent to the through-contact plug, penetrating through the horizontal conductive layers and spaced apart from the first horizontal conductive layer.
Potential Applications: - This semiconductor device could be used in various electronic devices such as smartphones, tablets, and computers. - It could also find applications in data storage systems and industrial automation.
Problems Solved: - The device provides a compact and efficient way to integrate memory cell structures with peripheral circuit structures. - The through-wiring region allows for seamless communication between different parts of the device.
Benefits: - Improved performance and reliability of electronic devices. - Enhanced data storage capabilities in a smaller footprint. - Simplified manufacturing processes for semiconductor devices.
Commercial Applications: Title: Advanced Semiconductor Device for Enhanced Electronic Systems This technology could be utilized in the production of high-performance electronic devices, leading to improved functionality and efficiency. The market implications include increased demand for faster and more reliable electronic components in various industries.
Prior Art: Readers interested in exploring prior art related to this technology can start by researching semiconductor device structures, memory cell integration techniques, and through-wiring technologies in the semiconductor industry.
Frequently Updated Research: Researchers in the field of semiconductor technology are constantly working on enhancing memory cell structures, improving communication between different parts of semiconductor devices, and optimizing manufacturing processes for increased efficiency.
Questions about Semiconductor Device Integration: 1. How does the through-wiring region improve the functionality of the semiconductor device? The through-wiring region allows for seamless communication between the memory cell structure and the peripheral circuit structure, enhancing the overall performance of the device.
2. What are the potential challenges in manufacturing semiconductor devices with integrated memory cell structures? Manufacturing semiconductor devices with integrated memory cell structures may pose challenges in terms of precise alignment, material compatibility, and process complexity.
Original Abstract Submitted
A semiconductor device includes a peripheral circuit structure including a first substrate and circuit elements on the first substrate; and a memory cell structure including a second substrate on the first substrate, a first horizontal conductive layer on the second substrate, a second horizontal conductive layer on the first horizontal conductive layer, gate electrodes spaced apart from each other and stacked on the second horizontal conductive layer, channel structures penetrating through the gate electrodes, and separation regions penetrating the gate electrodes, extending, and spaced apart from each other. The semiconductor device has a through-wiring region including a through-contact plug electrically connecting the memory cell structure and the peripheral circuit structure, the separation regions include first separation regions adjacent to the through-contact plug, and the first separation regions penetrate through the second horizontal conductive layer and are spaced apart from the first horizontal conductive layer.
