18600901. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (SEMICONDUCTOR ENERGY LABORATORY CO., LTD.)

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Organization Name

SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor(s)

Junichi Koezuka of Tochigi (JP)

Toshinari Sasaki of Shinagawa (JP)

Katsuaki Tochibayashi of Isehara (JP)

Shunpei Yamazaki of Setagaya (JP)

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18600901 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Simplified Explanation: The patent application describes a structure that suppresses changes in the electrical characteristics of a semiconductor device with an interlayer insulating film over a transistor containing an oxide semiconductor as a semiconductor film. This structure includes a first insulating film with a void portion in a step region formed by a source electrode and a drain electrode over the semiconductor film, containing silicon oxide, and a second insulating film with silicon nitride, covering the void portion in the first insulating film.

Key Features and Innovation:

• Structure to suppress changes in electrical characteristics of a semiconductor device
• First insulating film with void portion in step region
• Second insulating film with silicon nitride covering void portion
• Prevents void portion from expanding outward

Potential Applications: The technology can be applied in the semiconductor industry for the development of more stable and reliable semiconductor devices.

Problems Solved: The technology addresses the issue of changes in electrical characteristics of semiconductor devices with interlayer insulating films over transistors containing oxide semiconductors.

Benefits:

• Improved stability of semiconductor devices
• Enhanced reliability of electrical characteristics
• Prevention of void expansion in insulating films

Commercial Applications: Potential commercial applications include the production of advanced semiconductor devices with improved performance and durability, catering to various industries such as electronics, telecommunications, and computing.

Prior Art: Readers can explore prior research on semiconductor device structures with interlayer insulating films and methods to suppress changes in electrical characteristics.

Frequently Updated Research: Researchers may find updated studies on semiconductor device structures and materials to further enhance the stability and reliability of such devices.

Questions about Semiconductor Device Structures with Interlayer Insulating Films: 1. How does the structure described in the patent application contribute to the stability of semiconductor devices? 2. What are the key differences between the first insulating film with silicon oxide and the second insulating film with silicon nitride in terms of preventing void expansion?

Original Abstract Submitted

A change in electrical characteristics of a semiconductor device including an interlayer insulating film over a transistor including an oxide semiconductor as a semiconductor film is suppressed. The structure includes a first insulating film which includes a void portion in a step region formed by a source electrode and a drain electrode over the semiconductor film and contains silicon oxide as a component, and a second insulating film containing silicon nitride, which is provided in contact with the first insulating film to cover the void portion in the first insulating film. The structure can prevent the void portion generated in the first insulating film from expanding outward.