18600403. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Wandon Kim of Seongnam-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18600403 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation: The semiconductor device described in the patent application consists of two channel patterns with vertically-stacked semiconductor patterns, each connected to a source/drain pattern of different conductivity types. Interface layers with different metallic elements are positioned between the source/drain patterns and contact plugs, with the second interface layer lower than the topmost semiconductor pattern.
Key Features and Innovation:
- Two channel patterns with vertically-stacked semiconductor patterns
- Source/drain patterns of different conductivity types
- Interface layers with different metallic elements
- Contact plugs inserted in the source/drain patterns
- Second interface layer positioned lower than the topmost semiconductor pattern
Potential Applications: This technology could be applied in the semiconductor industry for advanced electronic devices, integrated circuits, and microprocessors.
Problems Solved: This technology addresses the need for improved conductivity and contact between semiconductor patterns and source/drain patterns in semiconductor devices.
Benefits:
- Enhanced performance and efficiency in semiconductor devices
- Improved conductivity and contact between different patterns
- Potential for smaller and more advanced electronic devices
Commercial Applications: Potential commercial applications include the production of high-performance electronic devices, integrated circuits for consumer electronics, and advanced computing systems.
Questions about Semiconductor Device Technology: 1. How does the different conductivity types of the source/drain patterns impact the overall performance of the semiconductor device? 2. What are the specific advantages of using interface layers with different metallic elements in this technology?
Frequently Updated Research: Ongoing research in semiconductor device technology focuses on further optimizing the conductivity and contact interfaces to enhance overall device performance and efficiency.
Original Abstract Submitted
A semiconductor device includes a first and second channel patterns on a substrate, each of the first and second channel patterns including vertically-stacked semiconductor patterns; a first source/drain pattern connected to the first channel pattern; a second source/drain pattern connected to the second channel pattern, the first and second source/drain patterns having different conductivity types; a first contact plug inserted in the first source/drain pattern, and a second contact plug inserted in the second source/drain pattern; a first interface layer interposed between the first source/drain pattern and the first contact plug; and a second interface layer interposed between the second source/drain pattern and the second contact plug, the first and second interface layers including different metallic elements from each other, a bottom portion of the second interface layer being positioned at a level that is lower than a bottom surface of a topmost one of the semiconductor patterns.
