18600216. Gate Oxide Structures In Semiconductor Devices simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
Gate Oxide Structures In Semiconductor Devices
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Chung-Liang Cheng of Changhua County 500 (TW)
Gate Oxide Structures In Semiconductor Devices - A simplified explanation of the abstract
This abstract first appeared for US patent application 18600216 titled 'Gate Oxide Structures In Semiconductor Devices
Simplified Explanation: This patent application discloses a semiconductor device with various gate structure configurations and a method for manufacturing it. The method involves creating nanostructured channel regions on fin structures, forming oxide layers with different thicknesses, applying a dielectric layer, adding capping layers with varying oxygen diffusivities, growing the oxide layers, and finally, placing a gate metal fill layer over the dielectric layer.
- The method involves forming nanostructured channel regions on fin structures.
- Different thicknesses of oxide layers are used in the process.
- Capping layers with varying oxygen diffusivities are applied.
- The oxide layers are grown to different thicknesses.
- A gate metal fill layer is placed over the dielectric layer.
Key Features and Innovation:
- Utilizes nanostructured channel regions for improved performance.
- Varying thicknesses of oxide layers enhance device functionality.
- Capping layers with different oxygen diffusivities provide unique characteristics.
- Growth of oxide layers to different thicknesses allows for customization.
- Gate metal fill layer ensures proper functioning of the device.
Potential Applications: This technology can be applied in:
- Semiconductor manufacturing
- Electronics industry
- Integrated circuits
Problems Solved:
- Enhances device performance
- Allows for customization
- Improves functionality
Benefits:
- Increased efficiency
- Enhanced device performance
- Customizable design options
Commercial Applications: Potential commercial uses include:
- Production of advanced semiconductor devices
- Development of high-performance electronics
- Integration into various electronic systems
Questions about Semiconductor Device with Different Gate Structure Configurations: 1. How does the use of nanostructured channel regions impact device performance? 2. What are the advantages of applying capping layers with varying oxygen diffusivities?
Frequently Updated Research: Stay updated on the latest advancements in semiconductor device technology to leverage the full potential of this innovation.
Original Abstract Submitted
A semiconductor device with different gate structure configurations and a method of fabricating the same are disclosed. The method includes forming first and second nanostructured channel regions on first and second fin structures, forming first and second oxide layers with first and second thicknesses, forming a dielectric layer with first and second layer portions on the first and second oxide layers, forming first and second capping layers with first and second oxygen diffusivities on the first and second layer portions, growing the first and second oxide layers to have third and fourth thicknesses, and forming a gate metal fill layer over the dielectric layer. The first and second thicknesses are substantially equal to each other and the first and second oxide layers surround the first and second nanostructured channel regions. The second oxygen diffusivity is higher than the first oxygen diffusivity. The fourth thickness is greater than the third thickness.
