18600197. GRAPHENE BARRIER LAYER simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
GRAPHENE BARRIER LAYER
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Shin-Yi Yang of New Taipei City (TW)
Ming-Han Lee of Taipei City (TW)
GRAPHENE BARRIER LAYER - A simplified explanation of the abstract
This abstract first appeared for US patent application 18600197 titled 'GRAPHENE BARRIER LAYER
The abstract of this patent application describes interconnect structures involving multiple dielectric layers and a graphene layer, with contact features extending through the layers.
- The interconnect structure includes a first contact feature in a first dielectric layer.
- A second dielectric layer is positioned over the first dielectric layer.
- A third dielectric layer is then placed over the second dielectric layer.
- A second contact feature extends through the second and third dielectric layers.
- A graphene layer is located between the second contact feature and the third dielectric layer.
Potential Applications: - Semiconductor manufacturing - Electronics industry - Nanotechnology research
Problems Solved: - Improved interconnect performance - Enhanced signal transmission - Reduced signal loss
Benefits: - Increased efficiency in electronic devices - Enhanced reliability of interconnect structures - Potential for faster data transmission speeds
Commercial Applications: Title: Advanced Interconnect Structures for High-Performance Electronics This technology could be utilized in the development of high-speed processors, memory devices, and communication systems, leading to improved performance and reliability in various electronic applications.
Questions about Interconnect Structures: 1. How does the graphene layer contribute to the performance of the interconnect structure? 2. What are the potential challenges in integrating these advanced interconnect structures into existing electronic devices?
Frequently Updated Research: Researchers are continually exploring new materials and techniques to further enhance the performance of interconnect structures in electronic devices. Stay updated on the latest advancements in graphene-based interconnect technologies for cutting-edge applications.
Original Abstract Submitted
Interconnect structures and method of forming the same are disclosed herein. An exemplary interconnect structure includes a first contact feature in a first dielectric layer, a second dielectric layer over the first dielectric layer, a third dielectric layer over the second dielectric layer, a second contact feature extending through the second dielectric layer and the third dielectric layer, and a graphene layer between the second contact feature and the third dielectric layer.
