18599779. SOURCE/DRAIN STRUCTURE FOR SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
SOURCE/DRAIN STRUCTURE FOR SEMICONDUCTOR DEVICE
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Shahaji B. More of Hsinchu (TW)
Cheng-Han Lee of New Taipei City (TW)
SOURCE/DRAIN STRUCTURE FOR SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18599779 titled 'SOURCE/DRAIN STRUCTURE FOR SEMICONDUCTOR DEVICE
The present disclosure describes a semiconductor structure and a method for forming the same. The semiconductor structure includes a substrate, a gate structure over the substrate, and a source/drain (S/D) region adjacent to the gate structure. The S/D region has first and second side surfaces separated from each other, as well as top and bottom surfaces between the side surfaces. The separation between the top and bottom surfaces is greater than the separation between the side surfaces.
- The semiconductor structure includes a substrate, gate structure, and source/drain (S/D) region.
- The S/D region has distinct side, top, and bottom surfaces.
- The separation between the top and bottom surfaces is greater than the separation between the side surfaces.
Potential Applications: - Semiconductor manufacturing - Integrated circuit design - Electronics industry
Problems Solved: - Enhanced performance of semiconductor devices - Improved efficiency in circuit design - Better control of electrical properties
Benefits: - Increased functionality of semiconductor structures - Higher precision in device fabrication - Enhanced overall performance of electronic systems
Commercial Applications: Title: Advanced Semiconductor Structures for Enhanced Electronics This technology can be applied in the development of cutting-edge electronic devices, improving their performance and efficiency. The market implications include a potential for increased demand in the semiconductor industry and advancements in electronic product capabilities.
Prior Art: Readers can explore prior research on semiconductor structures, gate design, and source/drain regions in semiconductor devices to gain a deeper understanding of the innovation presented in this disclosure.
Frequently Updated Research: Stay informed about the latest advancements in semiconductor technology, gate structures, and device fabrication techniques to remain at the forefront of innovation in the electronics industry.
Questions about Semiconductor Structures: 1. How does the separation between the top and bottom surfaces impact the performance of the semiconductor structure? The separation between the top and bottom surfaces influences the electrical properties and efficiency of the semiconductor device, allowing for better control and optimization of its functionality.
2. What are the key considerations in designing the source/drain region of a semiconductor structure? Designing the source/drain region involves balancing factors such as surface area, separation distances, and material properties to achieve optimal device performance and reliability.
Original Abstract Submitted
The present disclosure describes a semiconductor structure and a method for forming the same. The semiconductor structure can include a substrate, a gate structure over the substrate, and a source/drain (S/D) region adjacent to the gate structure. The S/D region can include first and second side surfaces separated from each other. The S/D region can further include top and bottom surfaces between the first and second side surfaces. A first separation between the top and bottom surfaces can be greater than a second separation between the first and second side surfaces.
