18599597. ON-CHIP CAPACITORS IN SEMICONDUCTOR DEVICES AND METHODS FOR FORMING THE SAME simplified abstract (Yangtze Memory Technologies Co., Ltd.)
Contents
ON-CHIP CAPACITORS IN SEMICONDUCTOR DEVICES AND METHODS FOR FORMING THE SAME
Organization Name
Yangtze Memory Technologies Co., Ltd.
Inventor(s)
ON-CHIP CAPACITORS IN SEMICONDUCTOR DEVICES AND METHODS FOR FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18599597 titled 'ON-CHIP CAPACITORS IN SEMICONDUCTOR DEVICES AND METHODS FOR FORMING THE SAME
The abstract describes a method for forming a three-dimensional memory device, involving the creation of a stack with different regions and the formation of capacitors with specific orientations.
- A stack is formed with a first region and a second region along different directions.
- The stack includes first and second stacks in each region.
- An interlayer dielectric (ILD) layer is formed over the second stack.
- Capacitors with first contacts are created through the ILD layer on one side of the second stack in a perpendicular direction.
Potential Applications: - This technology can be applied in the development of advanced memory devices for various electronic devices. - It can enhance the storage capacity and performance of memory systems in computers, smartphones, and other gadgets.
Problems Solved: - Addresses the need for higher memory density and improved performance in modern electronic devices. - Solves challenges related to the design and fabrication of three-dimensional memory structures.
Benefits: - Increased memory capacity and speed. - Enhanced efficiency and reliability of memory devices. - Potential cost savings in memory production processes.
Commercial Applications: - This innovation has significant commercial potential in the semiconductor industry. - It can be utilized by memory manufacturers to produce next-generation memory devices with improved capabilities.
Questions about the technology: 1. How does the formation of capacitors with specific orientations contribute to the performance of the memory device? 2. What are the key advantages of using a stack with different regions in the fabrication process?
Original Abstract Submitted
A method for forming a three-dimensional (D) memory device is disclosed. A stack is formed. The stack includes a first region and a second region disposed on a side of the first region along a first direction. The stack includes a first stack in the first region and a second stack in the second region. An interlayer dielectric (ILD) layer is formed over the second stack. Capacitors including first contacts each extending through the ILD layer and disposed on a first side of the second stack along a second direction are formed. The second direction is perpendicular to the first direction.
