18599522. SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18599522 titled 'SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
The semiconductor device described in the patent application includes a substrate with a gate trench, a gate insulating film, a titanium nitride (TiN) lower gate electrode film, a polysilicon upper gate electrode film, and a gate capping film.
- The titanium nitride (TiN) lower gate electrode film has a top surface, a first side surface, and a second side surface connected to the gate insulating film.
- The center portion of the top surface of the titanium nitride (TiN) lower gate electrode film overlaps the center portion of the polysilicon upper gate electrode film.
- The gate capping film is on top of the polysilicon upper gate electrode film.
- The configuration of the layers in the semiconductor device allows for efficient operation and performance.
Potential Applications: This technology can be used in the manufacturing of advanced semiconductor devices for various electronic applications such as integrated circuits, microprocessors, and memory chips.
Problems Solved: The innovation addresses the need for improved gate electrode structures in semiconductor devices to enhance performance and reliability.
Benefits: - Enhanced performance and efficiency in semiconductor devices - Improved reliability and durability - Potential for miniaturization and increased functionality in electronic devices
Commercial Applications: This technology has significant commercial potential in the semiconductor industry, particularly in the development of high-performance electronic devices for consumer electronics, telecommunications, and computing.
Prior Art: Researchers can explore prior art related to gate electrode structures in semiconductor devices, materials science in electronics, and advancements in semiconductor manufacturing processes.
Frequently Updated Research: Researchers and industry experts may find relevant information on the latest developments in semiconductor materials, device structures, and manufacturing techniques that could impact the field of semiconductor technology.
Questions about the Technology: 1. How does the configuration of the gate electrode films contribute to the overall performance of the semiconductor device? 2. What are the potential challenges in scaling this technology for mass production in semiconductor manufacturing?
Original Abstract Submitted
A semiconductor device includes a substrate, a gate trench in the substrate, a gate insulating film in the gate trench, a titanium nitride (TiN)-lower gate electrode film on the gate insulating film, the titanium nitride (TiN)-lower gate electrode film including a top surface, a first side surface, and a second side surface opposite the first side surface, a polysilicon-upper gate electrode film on the titanium nitride (TiN)-lower gate electrode film, and a gate capping film on the polysilicon-upper gate electrode film. A center portion of the top surface of the titanium nitride (TiN)-lower gate electrode film overlaps a center portion of the polysilicon-upper gate electrode film in a direction that is perpendicular to a top surface of the substrate, and each of the first side surface and the second side surface of the titanium nitride (TiN)-lower gate electrode film is connected to the gate insulating film.
