18599458. MAGNETIC MEMORY DEVICE simplified abstract (Kioxia Corporation)
Contents
MAGNETIC MEMORY DEVICE
Organization Name
Inventor(s)
Hyung-Woo Ahn of Seongnam-si Gyeonggi-do (KR)
Ku Youl Jung of Icheon-si (KR)
MAGNETIC MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18599458 titled 'MAGNETIC MEMORY DEVICE
The abstract describes a magnetic memory device with a memory cell consisting of a switching element, a magnetoresistance effect element, and an electrode that connects the two elements. The electrode includes a first non-magnetic layer in contact with the switching element and a second non-magnetic layer with an amorphous structure and containing a metal oxide or metal nitride.
- Memory device with a unique electrode structure for improved performance
- Electrode includes a first non-magnetic layer in contact with the switching element
- Second non-magnetic layer with an amorphous structure and metal oxide or metal nitride content
- Designed to enhance the functionality and efficiency of the memory cell
- Potential for increased data storage capacity and faster data access times
Potential Applications: - Data storage devices - Computing systems - Electronic devices requiring memory storage
Problems Solved: - Enhancing memory cell performance - Improving data storage efficiency - Increasing data access speeds
Benefits: - Improved memory device functionality - Enhanced data storage capabilities - Faster data access times
Commercial Applications: Title: Advanced Magnetic Memory Devices for Enhanced Data Storage This technology could be utilized in various commercial applications such as: - Solid-state drives - Magnetic random-access memory (MRAM) devices - Data centers for efficient data storage and retrieval
Questions about Magnetic Memory Devices: 1. How does the unique electrode structure impact the performance of the memory cell? The unique electrode structure enhances the functionality and efficiency of the memory cell by providing a stable connection between the switching element and the magnetoresistance effect element.
2. What are the potential advantages of using metal oxides or metal nitrides in the second non-magnetic layer of the electrode? Metal oxides or metal nitrides in the second non-magnetic layer contribute to the amorphous structure of the electrode, which can improve the overall performance and reliability of the memory device.
Original Abstract Submitted
According to one embodiment, a magnetic memory device includes a memory cell. The memory cell includes a switching element, a magnetoresistance effect element, and an electrode that electrically couples the switching element to the magnetoresistance effect element. The electrode includes: a first non-magnetic layer being in contact with the switching element; and a second non-magnetic layer provided on a side opposite to a side on which the switching element is provided with respect to the first non-magnetic layer. The second non-magnetic layer has an amorphous structure and contains a metal oxide or a metal nitride.
