18598934. NANOSHEET FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
NANOSHEET FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
NANOSHEET FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING - A simplified explanation of the abstract
This abstract first appeared for US patent application 18598934 titled 'NANOSHEET FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING
The semiconductor device described in the patent application includes a fin protruding above a substrate, source/drain regions over the fin, nanosheets between the source/drain regions, and a gate structure over the fin and between the source/drain regions. The gate structure comprises a gate dielectric material, a first liner material, a work function material, a second liner material, and a gate electrode material.
- The semiconductor device features a unique gate structure design with multiple layers of different materials.
- The gate dielectric material surrounds each of the nanosheets, providing insulation and control over the flow of current.
- The work function material helps in controlling the threshold voltage of the device.
- The multiple layers of liner materials and gate electrode material contribute to the overall performance and efficiency of the semiconductor device.
Potential Applications: This technology can be applied in the development of advanced semiconductor devices for various electronic applications, such as mobile devices, computers, and other consumer electronics.
Problems Solved: The innovative gate structure design addresses the need for improved performance, efficiency, and control in semiconductor devices.
Benefits: The semiconductor device with this gate structure design offers enhanced performance, efficiency, and control over the flow of current, leading to better overall device functionality.
Commercial Applications: This technology has significant commercial potential in the semiconductor industry, particularly in the development of next-generation electronic devices with improved performance and efficiency.
Questions about the technology: 1. How does the gate structure design impact the overall performance of the semiconductor device? 2. What are the potential challenges in implementing this technology in mass production?
Original Abstract Submitted
A semiconductor device includes a fin protruding above a substrate; source/drain regions over the fin; nanosheets between the source/drain regions; and a gate structure over the fin and between the source/drain regions. The gate structure includes: a gate dielectric material around each of the nanosheets; a first liner material around the gate dielectric material; a work function material around the first liner material; a second liner material around the work function material; and a gate electrode material around at least portions of the second liner material.
