18598781. SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Shih-Yao Lin of New Taipei City (TW)
Chih-Han Lin of Hsinchu City (TW)
Hsiao Wen Lee of Hsinchu City (TW)
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 18598781 titled 'SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF
The semiconductor device described in the abstract consists of multiple semiconductor layers that are vertically separated from each other. Each layer extends along a first lateral direction. The device also includes a gate structure that extends along a second lateral direction and wraps around each semiconductor layer. The lower portion of the gate structure comprises multiple first gate sections that are laterally aligned with the semiconductor layers, each with ends that extend along the second lateral direction and present a first curvature-based profile.
- The semiconductor device features multiple vertically separated semiconductor layers.
- Each semiconductor layer extends along a first lateral direction.
- The gate structure wraps around each semiconductor layer and extends along a second lateral direction.
- The lower portion of the gate structure includes multiple first gate sections that are laterally aligned with the semiconductor layers.
- Each first gate section has ends that extend along the second lateral direction and present a first curvature-based profile.
Potential Applications: - This technology could be used in the development of advanced semiconductor devices for various electronic applications. - It may find applications in the manufacturing of high-performance transistors and integrated circuits.
Problems Solved: - The technology addresses the need for improved gate structures in semiconductor devices. - It provides a solution for enhancing the performance and efficiency of electronic components.
Benefits: - Improved functionality and performance of semiconductor devices. - Enhanced control and efficiency in electronic circuits. - Potential for increased speed and reliability in electronic systems.
Commercial Applications: Title: Advanced Semiconductor Devices for Enhanced Electronic Performance This technology could have commercial applications in the semiconductor industry for the development of high-performance electronic components. It may impact markets related to consumer electronics, telecommunications, and computing.
Questions about the technology: 1. How does the gate structure in this semiconductor device improve performance? 2. What are the potential implications of this technology for the semiconductor industry?
Original Abstract Submitted
A semiconductor device includes a plurality of semiconductor layers vertically separated from one another. Each of the plurality of semiconductor layers extends along a first lateral direction. The semiconductor device includes a gate structure that extends along a second lateral direction and comprises at least a lower portion that wraps around each of the plurality of semiconductor layers. The lower portion of the gate structure comprises a plurality of first gate sections that are laterally aligned with the plurality of semiconductor layers, respectively, and wherein each of the plurality of first gate sections has ends that each extend along the second lateral direction and present a first curvature-based profile.
