18598743. PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS simplified abstract (Tokyo Electron Limited)
Contents
PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS
Organization Name
Inventor(s)
Ikko Tanaka of Kurokawa-gun (JP)
PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18598743 titled 'PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS
The abstract describes a plasma processing method that involves placing a substrate on a support surface in a chamber, etching a film on the substrate with plasma, and cleaning the chamber with plasma. A bias voltage with a pulse waveform is applied to a bias electrode in the substrate support during the etching and cleaning processes, with a higher bias frequency in the cleaning step compared to the etching step.
- The method involves plasma processing of substrates in a chamber.
- A bias voltage with a pulse waveform is applied to a bias electrode during etching and cleaning processes.
- The bias frequency is higher during the chamber cleaning step compared to the film etching step.
Potential Applications: - Semiconductor manufacturing - Thin film deposition - Surface cleaning processes
Problems Solved: - Efficient and precise plasma processing of substrates - Enhanced cleaning of chamber surfaces
Benefits: - Improved process control - Higher quality film etching and cleaning - Increased productivity in plasma processing operations
Commercial Applications: Title: Advanced Plasma Processing Method for Semiconductor Manufacturing This technology can be used in semiconductor fabrication facilities to enhance film etching and chamber cleaning processes, leading to improved product quality and production efficiency.
Questions about Plasma Processing Method: 1. How does the bias voltage with a pulse waveform improve the plasma processing efficiency? The bias voltage with a pulse waveform helps to control the plasma etching and cleaning processes more precisely, leading to higher quality results. 2. What are the key differences in the bias frequency between the film etching and chamber cleaning steps? The bias frequency is higher during chamber cleaning to ensure thorough removal of contaminants and residues from the chamber surfaces.
Original Abstract Submitted
A plasma processing method includes (a) placing a substrate onto a substrate support surface of a substrate support in a chamber in a plasma processing apparatus. The plasma processing method further includes (b) etching a film on the substrate with plasma. The plasma processing method further includes (c) cleaning the chamber with plasma. In (b) and (c), a bias voltage including a pulse of a direct current voltage and having a pulse waveform is cyclically applied to a bias electrode in the substrate support. The bias voltage has a bias frequency being an inverse of a duration of a waveform cycle of the pulse waveform. The bias frequency is higher in (c) than in (b).
