18598672. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Mongsong Liang of Seongnam-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18598672 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract consists of three transistors on a substrate, each with source and drain regions, a gate structure, and a channel region connecting the source and drain regions.
- The second and third transistors have multiple channel portions spaced apart in a direction perpendicular to the substrate surface.
- The width of the channel portion in the third transistor is greater than that of the second transistor.
- Key Features and Innovation:**
- Three transistors with unique channel configurations.
- Varied channel widths for optimized performance.
- Potential Applications:**
- Advanced semiconductor technology.
- High-performance electronic devices.
- Problems Solved:**
- Enhancing transistor efficiency.
- Improving semiconductor device performance.
- Benefits:**
- Increased speed and efficiency.
- Enhanced functionality in electronic devices.
- Commercial Applications:**
- Semiconductor manufacturing industry.
- Electronics and technology sectors.
- Questions about Semiconductor Device:**
1. How does the unique channel configuration impact transistor performance? 2. What potential advancements can be made in semiconductor technology with this innovation?
- Frequently Updated Research:**
Stay updated on the latest developments in semiconductor technology to leverage the benefits of this innovative device design.
Original Abstract Submitted
A semiconductor device includes a first transistor, a second transistor and a third transistor provided on a substrate, the first to third transistors respectively including source and drain regions spaced apart from each other, a gate structure extending in a first direction on the substrate and interposed between the source and drain regions, and a channel region connecting the source and drain regions to each other. A channel region of the second transistor and a channel region of the third transistor respectively include a plurality of channel portions, the plurality of channel portions spaced apart from each other in a second direction, perpendicular to an upper surface of the substrate, and connected to the source and drain regions, respectively. A width of a channel portion of the third transistor in the first direction is greater than a width of a channel portion of the second transistor in the first direction.
