18598552. INTEGRATED CIRCUIT DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
INTEGRATED CIRCUIT DEVICE
Organization Name
Inventor(s)
INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18598552 titled 'INTEGRATED CIRCUIT DEVICE
The abstract describes an integrated circuit device with a unique structure involving ion implantation, line trenches, capacitor dielectric films, buried conductive lines, and capacitor contacts.
- The device includes a substrate with a cell array region and a peripheral circuit region.
- A first ion implantation region in the peripheral circuit region has line trenches extending in a horizontal direction.
- Lower capacitor dielectric films cover the inner walls of the line trenches.
- Buried conductive lines partially fill the line trenches and are placed on the lower capacitor dielectric films.
- First lower capacitor contacts are in contact with the buried conductive lines, while second lower capacitor contacts are in contact with the first ion implantation region.
Potential Applications: - This technology can be used in the manufacturing of integrated circuits for various electronic devices. - It can improve the performance and efficiency of semiconductor devices.
Problems Solved: - Enhances the functionality and reliability of integrated circuits. - Optimizes the use of space on the substrate.
Benefits: - Increased efficiency and performance of electronic devices. - Improved integration of components on the substrate.
Commercial Applications: Title: Advanced Integrated Circuit Technology for Enhanced Device Performance This technology can be applied in the production of smartphones, tablets, computers, and other electronic devices to enhance their performance and functionality.
Questions about the technology: 1. How does this technology improve the efficiency of integrated circuits? - This technology optimizes the layout of components on the substrate, leading to enhanced performance and functionality. 2. What are the potential applications of this innovative integrated circuit structure? - The applications range from consumer electronics to industrial equipment, where improved efficiency and performance are crucial.
Original Abstract Submitted
An integrated circuit device includes a substrate including a cell array region and a peripheral circuit region, a first ion implantation region located in an upper portion of the substrate in the peripheral circuit region, the first ion implantation region having a plurality of line trenches that extend in a first horizontal direction and cross the first ion implantation region, a plurality of lower capacitor dielectric films with each lower capacitor dielectric film configured to respectively cover inner walls of a respective line trench, a plurality of buried conductive lines that each partially fill a respective line trench and that are each respectively disposed on a respective lower capacitor dielectric film, a plurality of first lower capacitor contacts that are each in contact with a respective buried conductive line, and a plurality of second lower capacitor contacts that are in contact with the first ion implantation region.
