18598322. Method of Forming Conductive Feature Including Cleaning Step simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
Method of Forming Conductive Feature Including Cleaning Step
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Cheng-Wei Chang of Taipei City (TW)
Min-Hsiu Hung of Tainan City (TW)
Method of Forming Conductive Feature Including Cleaning Step - A simplified explanation of the abstract
This abstract first appeared for US patent application 18598322 titled 'Method of Forming Conductive Feature Including Cleaning Step
The abstract of the patent application describes a method of forming a semiconductor device by first creating a conductive feature at the bottom of an opening in a dielectric layer, leaving seeds on the sidewalls. These seeds are then treated, removed, and replaced with a second conductive feature to fill the opening.
- Formation of a first conductive feature on the bottom surface of an opening through a dielectric layer
- Leaving seeds on the sidewalls of the opening during the formation process
- Performing a treatment process on the seeds to form treated seeds
- Removing the treated seeds with a cleaning process, which may include rinsing with deionized water
- Forming a second conductive feature to fill the opening
Potential Applications: - Semiconductor manufacturing - Electronics industry
Problems Solved: - Improving the efficiency and precision of semiconductor device fabrication - Enhancing the performance of electronic devices
Benefits: - Higher quality semiconductor devices - Increased productivity in manufacturing processes
Commercial Applications: - Semiconductor companies - Electronics manufacturers
Questions about the technology: 1. How does the treatment process improve the performance of the semiconductor device? 2. What are the specific advantages of using deionized water in the cleaning process?
Frequently Updated Research: - Ongoing advancements in semiconductor manufacturing techniques - Research on improving the conductivity of semiconductor materials
Original Abstract Submitted
A method of forming a semiconductor device includes forming a first conductive feature on a bottom surface of an opening through a dielectric layer. The forming the first conductive feature leaves seeds on sidewalls of the opening. A treatment process is performed on the seeds to form treated seeds. The treated seeds are removed with a cleaning process. The cleaning process may include a rinse with deionized water. A second conductive feature is formed to fill the opening.
