18598266. Semiconductor Device and Method simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
Semiconductor Device and Method
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Ting-Li Yang of Tainan City (TW)
Po-Hao Tsai of Zhongli City (TW)
Ming-Da Cheng of Taoyuan City (TW)
Yung-Han Chuang of Tainan (TW)
Hsueh-Sheng Wang of Hsinchu (TW)
Semiconductor Device and Method - A simplified explanation of the abstract
This abstract first appeared for US patent application 18598266 titled 'Semiconductor Device and Method
The patent application describes methods for forming dummy under-bump metallurgy structures in semiconductor devices. These structures include redistribution lines, passivation layers, and under-bump metallurgy (UBM) structures that are electrically coupled to the redistribution lines.
- The semiconductor device includes a first redistribution line and a second redistribution line over a semiconductor substrate.
- A first passivation layer is over the first and second redistribution lines, followed by a second passivation layer.
- A first UBM structure is over the first redistribution line, extending through the passivation layers and electrically coupled to the first redistribution line.
- A second UBM structure is over the second redistribution line, extending through the second passivation layer and electrically isolated from the second redistribution line by the first passivation layer.
Potential Applications: - Semiconductor manufacturing - Integrated circuit production - Electronic device fabrication
Problems Solved: - Improving electrical connectivity in semiconductor devices - Enhancing the reliability of under-bump metallurgy structures - Increasing the efficiency of redistribution lines
Benefits: - Enhanced performance of semiconductor devices - Improved durability and longevity - Streamlined manufacturing processes
Commercial Applications: Title: Advanced Semiconductor Device Manufacturing Techniques This technology can be applied in various industries such as consumer electronics, telecommunications, automotive, and medical devices. It can lead to the development of more reliable and efficient semiconductor devices, ultimately benefiting manufacturers and end-users.
Questions about the technology: 1. How does the formation of dummy under-bump metallurgy structures impact the overall performance of semiconductor devices? 2. What are the specific challenges addressed by the integration of under-bump metallurgy structures in semiconductor manufacturing processes?
Original Abstract Submitted
Methods for forming dummy under-bump metallurgy structures and semiconductor devices formed by the same are disclosed. In an embodiment, a semiconductor device includes a first redistribution line and a second redistribution line over a semiconductor substrate; a first passivation layer over the first redistribution line and the second redistribution line; a second passivation layer over the first passivation layer; a first under-bump metallurgy (UBM) structure over the first redistribution line, the first UBM structure extending through the first passivation layer and the second passivation layer and being electrically coupled to the first redistribution line; and a second UBM structure over the second redistribution line, the second UBM structure extending through the second passivation layer, the second UBM structure being electrically isolated from the second redistribution line by the first passivation layer.
