18597816. MEMORY DEVICE, MEMORY INTEGRATED CIRCUIT AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

MEMORY DEVICE, MEMORY INTEGRATED CIRCUIT AND MANUFACTURING METHOD THEREOF

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Fu-Ting Sung of Taoyuan City (TW)

MEMORY DEVICE, MEMORY INTEGRATED CIRCUIT AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 18597816 titled 'MEMORY DEVICE, MEMORY INTEGRATED CIRCUIT AND MANUFACTURING METHOD THEREOF

Simplified Explanation:

This patent application describes a memory device with a unique composite bottom electrode structure, a top electrode, and a resistance variable layer in between.

• The memory device includes a composite bottom electrode, a top electrode, and a resistance variable layer.
• The composite bottom electrode consists of a first bottom electrode and a second bottom electrode stacked on top of each other.
• The second bottom electrode is laterally recessed from the first bottom electrode, creating a unique structure.
• The resistance variable layer is sandwiched between the composite bottom electrode and the top electrode.

Key Features and Innovation:

• Composite bottom electrode structure
• Lateral recess of the second bottom electrode
• Resistance variable layer for memory function

Potential Applications:

This technology can be used in various memory devices, such as non-volatile memory, resistive random-access memory (ReRAM), and more.

Problems Solved:

This technology addresses the need for improved memory device structures that offer better performance and reliability.

Benefits:

• Enhanced memory device performance
• Improved reliability
• Potential for higher memory density

Commercial Applications:

This technology could have significant implications in the semiconductor industry, particularly in the development of advanced memory devices for consumer electronics, data storage, and computing applications.

Prior Art:

Readers interested in prior art related to this technology can explore research papers, patents, and industry publications on memory device structures and materials.

Frequently Updated Research:

Researchers are constantly exploring new materials and structures for memory devices to improve performance and reliability.

Questions about Memory Device Technology:

1. What are the key advantages of using a composite bottom electrode structure in memory devices? 2. How does the lateral recess of the second bottom electrode contribute to the functionality of the memory device?

Original Abstract Submitted

A memory device, a memory integrated circuit and a manufacturing method of the memory device are provided. The memory device includes a composite bottom electrode, a top electrode and a resistance variable layer disposed between the composite bottom electrode and the top electrode. The composite bottom electrode includes a first bottom electrode and a second bottom electrode disposed over the first bottom electrode. A sidewall of the second bottom electrode is laterally recessed from sidewalls of the first bottom electrode layer and the resistance variable layer.