18597695. Integrated Circuitry Comprising A Memory Array Comprising Strings Of Memory Cells And Method Used In Forming A Memory Array Comprising Strings Of Memory Cells simplified abstract (Micron Technology, Inc.)
Integrated Circuitry Comprising A Memory Array Comprising Strings Of Memory Cells And Method Used In Forming A Memory Array Comprising Strings Of Memory Cells
Organization Name
Inventor(s)
John D. Hopkins of Meridian ID (US)
Nancy M. Lomeli of Boise ID (US)
Integrated Circuitry Comprising A Memory Array Comprising Strings Of Memory Cells And Method Used In Forming A Memory Array Comprising Strings Of Memory Cells - A simplified explanation of the abstract
This abstract first appeared for US patent application 18597695 titled 'Integrated Circuitry Comprising A Memory Array Comprising Strings Of Memory Cells And Method Used In Forming A Memory Array Comprising Strings Of Memory Cells
Simplified Explanation: The patent application describes a method of forming liners outside of channel material strings in two tiers, creating void spaces in the second tier. Conductively-doped semiconductive material is then heated to diffuse dopants into the channel material, increasing conductivity.
Key Features and Innovation:
- Formation of liners outside of channel material strings in two tiers
- Creation of void spaces in the second tier
- Diffusion of dopants from conductively-doped semiconductive material into the channel material to increase conductivity
Potential Applications: This technology could be used in semiconductor manufacturing processes to improve the performance of electronic devices.
Problems Solved: This technology addresses the need for increased conductivity in channel material strings in semiconductor devices.
Benefits: The technology can enhance the efficiency and performance of electronic devices by improving conductivity in channel material strings.
Commercial Applications: Potential commercial applications include the production of high-performance electronic devices such as smartphones, computers, and other semiconductor-based products.
Prior Art: Prior art related to this technology may include research on semiconductor manufacturing processes and methods for increasing conductivity in channel materials.
Frequently Updated Research: Researchers may be exploring new ways to further enhance conductivity in channel material strings in semiconductor devices.
Questions about the Technology: 1. What are the specific materials used in the conductively-doped semiconductive material? 2. How does the diffusion process work to increase conductivity in the channel material?
Original Abstract Submitted
A liner is formed laterally-outside of individual channel-material strings in one of first tiers and in one of second tiers. The liners are isotropically etched to form void-spaces in the one second tier above the one first tier. Individual of the void-spaces are laterally-between the individual channel-material strings and the second-tier material in the one second tier. Conductively-doped semiconductive material is formed against sidewalls of the channel material of the channel-material strings in the one first tier and that extends upwardly into the void-spaces in the one second tier. The conductively-doped semiconductive material is heated to diffuse conductivity-increasing dopants therein from the void-spaces laterally into the channel material laterally there-adjacent and upwardly into the channel material that is above the void-spaces.
