18597415. SUBSTRATE PROCESSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM simplified abstract (Kokusai Electric Corporation)
SUBSTRATE PROCESSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM
Organization Name
Inventor(s)
Koei Kuribayashi of Toyama-shi (JP)
Arito Ogawa of Toyama-shi (JP)
SUBSTRATE PROCESSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM - A simplified explanation of the abstract
This abstract first appeared for US patent application 18597415 titled 'SUBSTRATE PROCESSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM
The technique described in the abstract involves forming a first layer containing a Group 15 element on a substrate surface, followed by forming a film containing molybdenum on the first layer in a specific atmosphere.
- Formation of a first layer with a Group 15 element on a substrate surface.
- Formation of a film containing molybdenum on the first layer.
- Supplying a gas containing molybdenum and a reducing gas to the substrate.
- Repeating the process a predetermined number of times in an atmosphere that prevents decomposition of the first layer.
Potential Applications: - Semiconductor manufacturing - Thin film coatings - Solar cell production
Problems Solved: - Enhancing the performance of electronic devices - Improving the efficiency of solar panels
Benefits: - Increased conductivity - Enhanced durability - Improved overall device performance
Commercial Applications: Title: Advanced Thin Film Coating Technology for Semiconductor Devices This technology can be utilized in the production of high-performance semiconductor devices, leading to improved efficiency and reliability in various electronic applications.
Questions about the technology: 1. How does this technique compare to traditional methods of thin film deposition? 2. What specific properties of the Group 15 element and molybdenum make them suitable for this application?
Original Abstract Submitted
There is provided a technique that includes: (A) forming a first layer containing a Group element on a surface of a substrate by supplying a gas containing the Group 15 element to the substrate; and (B) forming a film containing molybdenum on the first layer by performing: (a) supplying a gas containing molybdenum to the substrate; and (b) supplying a reducing gas to the substrate, wherein (a) and (b) are performed a predetermined number of times in (B) in an atmosphere capable of suppressing a decomposition of the first layer.
