18596907. SEMICONDUCTOR DEVICE simplified abstract (SEMICONDUCTOR ENERGY LABORATORY CO., LTD.)

SEMICONDUCTOR DEVICE

Organization Name

SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor(s)

Hidekazu Miyairi of Hadano (JP)

Motoki Nakashima of Atsugi (JP)

SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18596907 titled 'SEMICONDUCTOR DEVICE

Simplified Explanation: The semiconductor device described in the patent application consists of a first transistor, a capacitor, and a second transistor stacked in a specific order.

• The first and second transistors each have a semiconductor layer, a first conductor, a first insulator, and a second conductor.
• The side surface of the semiconductor layer aligns with the side surface of the first conductor in each transistor.
• Both the semiconductor layer and the first conductor have openings, with the first insulator inside the opening.
• The first insulator has a depressed portion that reflects the shape of the opening, which is filled by the second conductor.
• The second conductor of the first transistor, one of the capacitor's electrodes, and the semiconductor layer of the second transistor are interconnected.

Key Features and Innovation:

• Stacked configuration of a first transistor, capacitor, and second transistor.
• Specific alignment and structure of the semiconductor layer, first conductor, and insulator.
• Interconnection of components within the device for enhanced functionality.

Potential Applications:

• Integrated circuits
• Microelectronics
• Semiconductor devices

Problems Solved:

• Miniaturization of semiconductor devices
• Enhanced integration of components
• Improved performance and functionality

Benefits:

• Increased efficiency in circuit design
• Space-saving in electronic devices
• Enhanced reliability and performance

Commercial Applications: The technology described in the patent application could have significant implications in the development of smaller, more efficient electronic devices, leading to advancements in various industries such as consumer electronics, telecommunications, and computing.

Prior Art: Readers interested in exploring prior art related to this technology may consider researching patents and publications in the field of semiconductor devices, integrated circuits, and microelectronics.

Frequently Updated Research: Stay updated on the latest advancements in semiconductor device technology, integrated circuits, and miniaturization techniques to understand the evolving landscape of this field.

Questions about Semiconductor Device Technology: 1. What are the potential challenges in implementing this semiconductor device technology in mass production? 2. How does this innovation compare to existing methods of miniaturizing and integrating semiconductor devices?

Original Abstract Submitted

A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a first transistor, a capacitor, and a second transistor stacked in this order. The first and second transistors each include a semiconductor layer, a first conductor over the semiconductor layer, a first insulator, and a second conductor over the first insulator. In each of the first and second transistors, a side surface of the semiconductor layer is aligned with a side surface of the first conductor; the semiconductor layer and the first conductor each have an opening; the first insulator is inside the opening; the first insulator has a depressed portion reflecting the shape of the opening; and a second conductor fills the depressed portion. The second conductor of the first transistor, one of a pair of electrodes of the capacitor, and the semiconductor layer of the second transistor are connected to each other.