18596747. ACOUSTIC WAVE DEVICE simplified abstract (Murata Manufacturing Co., Ltd.)
Contents
ACOUSTIC WAVE DEVICE
Organization Name
Murata Manufacturing Co., Ltd.
Inventor(s)
Kazumasa Haruta of Nagaokakyo-shi (JP)
ACOUSTIC WAVE DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18596747 titled 'ACOUSTIC WAVE DEVICE
The patent application describes an acoustic wave device with a piezoelectric layer that has anisotropy in its coefficient of linear expansion, along with electrodes and a heat dissipation structure.
- The device includes a support with a hollow portion, where the electrodes overlap the hollow portion.
- A heat dissipation structure is provided on the first main surface of the piezoelectric layer, with a high heat dissipation region.
- The electrodes have a higher coefficient of linear expansion than the piezoelectric layer.
Potential Applications: - This technology could be used in acoustic wave devices for various applications such as sensors, actuators, and communication devices.
Problems Solved: - The device addresses the issue of heat dissipation in piezoelectric devices, which can affect their performance and longevity.
Benefits: - Improved heat dissipation capabilities can enhance the overall efficiency and reliability of acoustic wave devices.
Commercial Applications: - This technology could have significant commercial implications in industries such as telecommunications, automotive, and healthcare where acoustic wave devices are commonly used.
Questions about the Technology: 1. How does the anisotropy in the coefficient of linear expansion of the piezoelectric layer impact the performance of the device? 2. What are the specific advantages of having electrodes with a higher coefficient of linear expansion in this technology?
Original Abstract Submitted
An acoustic wave device includes a support, a piezoelectric layer having anisotropy of a coefficient of linear expansion, and including first and second main surfaces, and first and second electrodes on the first and second main surfaces of the piezoelectric layer. The support includes a hollow portion. At least a portion of the first and second electrodes overlaps the hollow portion. A heat dissipation structure including the support is provided on the first main surface side of the piezoelectric layer. One of a first and second region includes a high heat dissipation region. Each of the first and second electrodes includes an electrode layer having a higher coefficient of linear expansion than a maximum coefficient of linear expansion of the piezoelectric layer.