18596580. METHODS OF FORMING MICROELECTRONIC DEVICES WITH NITROGEN-RICH INSULATIVE STRUCTURES, AND RELATED MEMORY DEVICES AND ELECTRONIC SYSTEMS simplified abstract (Micron Technology, Inc.)
METHODS OF FORMING MICROELECTRONIC DEVICES WITH NITROGEN-RICH INSULATIVE STRUCTURES, AND RELATED MEMORY DEVICES AND ELECTRONIC SYSTEMS
Organization Name
Inventor(s)
Swapnil A. Lengade of Boise ID (US)
Carlo Mendoza Orofeo of Singapore (SG)
METHODS OF FORMING MICROELECTRONIC DEVICES WITH NITROGEN-RICH INSULATIVE STRUCTURES, AND RELATED MEMORY DEVICES AND ELECTRONIC SYSTEMS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18596580 titled 'METHODS OF FORMING MICROELECTRONIC DEVICES WITH NITROGEN-RICH INSULATIVE STRUCTURES, AND RELATED MEMORY DEVICES AND ELECTRONIC SYSTEMS
The patent application describes a method of forming a microelectronic device by creating a stack structure with alternating insulative and additional insulative structures, some of which contain silicon nitride with a specific nitrogen-to-silicon ratio. Openings are then formed in the stack structure, and cell pillar structures are created within these openings, each consisting of a semiconductor channel material that extends vertically through the stack structure.
- Formation of a stack structure with alternating insulative and additional insulative structures
- Use of silicon nitride with a specific nitrogen-to-silicon ratio in some additional insulative structures
- Creation of openings in the stack structure
- Formation of cell pillar structures within the openings, comprising semiconductor channel material
- Vertical extension of the semiconductor channel material through the stack structure
Potential Applications: - Memory devices - Microelectronic devices - Electronic systems
Problems Solved: - Enhanced performance of microelectronic devices - Improved memory device functionality
Benefits: - Increased efficiency in microelectronic device operation - Enhanced memory device capabilities
Commercial Applications: Title: "Innovative Microelectronic Device Formation Method for Enhanced Performance" This technology could be utilized in the manufacturing of memory devices, microelectronic devices, and electronic systems, leading to improved functionality and performance in various electronic applications.
Questions about Microelectronic Device Formation Method: 1. How does the use of silicon nitride with a specific nitrogen-to-silicon ratio impact the performance of the microelectronic device? 2. What are the potential commercial implications of implementing this innovative method in memory device production?
Original Abstract Submitted
A method of forming a microelectronic device comprises forming a stack structure comprising a vertically alternating sequence of insulative structures and additional insulative structures, at least some of the additional insulative structures comprising silicon nitride having a ratio of nitrogen atoms to silicon atoms greater than about 1.58:1.00, forming openings through the stack structure, and forming cell pillar structures within the openings, the cell pillar structures individually comprising a semiconductor channel material vertically extending through the stack structure. Related methods, microelectronic devices, memory devices, and electronic systems are also described.
