18596404. 3D IC POWER GRID simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
3D IC POWER GRID
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Noor E.V. Mohamed of Hsinchu (TW)
Fong-Yuan Chang of Hsinchu (TW)
Po-Hsiang Huang of Hsinchu (TW)
3D IC POWER GRID - A simplified explanation of the abstract
This abstract first appeared for US patent application 18596404 titled '3D IC POWER GRID
Simplified Explanation: The abstract describes a three-dimensional Integrated Circuit (IC) Power Grid (PG) with a unique power distribution structure.
Key Features and Innovation:
- Three-dimensional IC PG with a first IC die, a second IC die, an interface, and a power distribution structure.
- Interface between the first and second IC die.
- Power distribution structure connected to the interface.
- Power distribution structure includes at least one Through-Silicon Vias (TSV) and a ladder structure connected to at least one TSV.
Potential Applications: The three-dimensional IC PG can be used in various electronic devices requiring efficient power distribution, such as smartphones, tablets, and computers.
Problems Solved: This technology addresses the challenge of distributing power effectively in compact electronic devices with multiple IC dies.
Benefits:
- Improved power distribution efficiency.
- Enhanced performance of electronic devices.
- Compact design for space-saving.
Commercial Applications: Potential commercial applications include consumer electronics, telecommunications equipment, and automotive electronics.
Questions about Three-Dimensional IC Power Grid (PG): 1. How does the three-dimensional IC PG improve power distribution efficiency? 2. What are the key components of the power distribution structure in the three-dimensional IC PG?
Frequently Updated Research: Ongoing research focuses on optimizing the design and performance of three-dimensional IC PG for various electronic applications.
Original Abstract Submitted
A three dimensional Integrated Circuit (IC) Power Grid (PG) may be provided. The three dimensional IC PG may comprise a first IC die, a second IC die, an interface, and a power distribution structure. The interface may be disposed between the first IC die and the second IC die. The power distribution structure may be connected to the interface. The power distribution structure may comprise at least one Through-Silicon Vias (TSV) and a ladder structure connected to at least one TSV.
