18596322. IMAGE SENSOR simplified abstract (Samsung Electronics Co., Ltd.)
Contents
IMAGE SENSOR
Organization Name
Inventor(s)
IMAGE SENSOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 18596322 titled 'IMAGE SENSOR
The image sensor described in the patent application includes a pixel isolation structure in a semiconductor substrate that defines a first pixel region, with first and second photoelectric conversion regions within that region, separated by a separation structure.
- The pixel isolation structure consists of first and second pixel isolation portions that are arranged in different directions and connect to each other.
- The separation structure is positioned between the first and second photoelectric conversion regions, at the same level as them in a perpendicular direction.
- The pixel isolation structure and separation structure work together to improve the performance and efficiency of the image sensor.
Potential Applications: This technology could be used in digital cameras, smartphones, security cameras, and other devices that require high-quality image sensors.
Problems Solved: The technology addresses issues related to pixel crosstalk and noise in image sensors, leading to clearer and more accurate image capture.
Benefits: Improved image quality, reduced noise, enhanced performance, and increased efficiency in image sensor technology.
Commercial Applications: This technology could be highly valuable in the consumer electronics industry, particularly in the development of advanced camera systems for various devices.
Questions about the Technology: 1. How does the pixel isolation structure contribute to the performance of the image sensor? 2. What are the specific advantages of the separation structure in improving image quality and sensor efficiency?
Original Abstract Submitted
An image sensor may include a pixel isolation structure disposed in a semiconductor substrate to define a first pixel region, first and second photoelectric conversion regions disposed in the first pixel region, and a separation structure disposed in the first pixel region, between the first and second photoelectric conversion regions. The pixel isolation structure may include first pixel isolation portions, which are spaced apart from each other in a second direction and extend lengthwise in a first direction, and second pixel isolation portions, which are spaced apart from each other in the first direction and extend lengthwise in the second direction to connect to the first pixel isolation portions. The separation structure may be spaced apart from the pixel isolation structure in the first direction and the second direction, and is at least partly at the same level as the first and second photoelectric conversion regions in a third direction perpendicular to the first direction and the second direction.
