18596115. MEMORY DEVICE AND METHOD FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

MEMORY DEVICE AND METHOD FOR FORMING THE SAME

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Hsin-Wen Su of Yunlin County (TW)

Yu-Kuan Lin of Taipei City (TW)

Shih-Hao Lin of Hsinchu City (TW)

Lien-Jung Hung of Taipei City (TW)

Ping-Wei Wang of Hsinchu City (TW)

MEMORY DEVICE AND METHOD FOR FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18596115 titled 'MEMORY DEVICE AND METHOD FOR FORMING THE SAME

The memory device described in the patent application consists of a substrate, two transistors, two word lines, and a bit line. The transistors are connected to each other and have different semiconductor layers, gate structures, and source/drain structures.

• The first and second transistors are connected to each other over the substrate.
• Each transistor has different semiconductor layers, with the first layers narrower than the second layers.
• The first word line is connected to the gate structure of the first transistor.
• The second word line is connected to the gate structure of the second transistor.
• The bit line is connected to the source/drain structure of the first transistor.

Potential Applications: - This technology can be used in various memory devices such as RAM and flash memory. - It can also be applied in embedded systems and microcontrollers.

Problems Solved: - This technology allows for efficient data storage and retrieval in memory devices. - It enables faster access times and improved performance in electronic devices.

Benefits: - Improved memory device performance. - Enhanced data storage capabilities. - Increased efficiency in electronic devices.

Commercial Applications: Title: Advanced Memory Devices for Enhanced Performance This technology can be utilized in the production of high-speed memory modules for computers, smartphones, and other electronic devices. It can also be integrated into IoT devices and automotive electronics for improved data processing capabilities.

Questions about Memory Devices: 1. How does the width of the semiconductor layers affect the performance of the transistors?

  - The width of the semiconductor layers impacts the conductivity and speed of data transfer within the transistors.

2. What are the potential challenges in scaling this technology for mass production?

  - Scaling this technology may face challenges related to manufacturing processes, material costs, and integration with existing systems.

Original Abstract Submitted

A memory device includes a substrate, a first transistor and a second transistor, a first word line, a second word line, and a bit line. The first transistor and the second transistor are over the substrate and are electrically connected to each other, in which each of the first and second transistors includes first semiconductor layers and second semiconductor layers, a gate structure, and source/drain structures, in which the first semiconductor layers are in contact with the second semiconductor layers, and a width of the first semiconductor layers is narrower than a width of the second semiconductor layers. The first word line is electrically connected to the gate structure of the first transistor. The second word line is electrically connected to the gate structure of the second transistor. The bit line is electrically connected to a first one of the source/drain structures of the first transistor.