18595909. MEMORY DEVICE AND OPERATION THEREOF simplified abstract (Yangtze Memory Technologies Co., Ltd.)
Contents
- 1 MEMORY DEVICE AND OPERATION THEREOF
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 MEMORY DEVICE AND OPERATION THEREOF - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Key Features and Innovation
- 1.6 Potential Applications
- 1.7 Problems Solved
- 1.8 Benefits
- 1.9 Commercial Applications
- 1.10 Prior Art
- 1.11 Frequently Updated Research
- 1.12 Questions about Voltage Control and Capacitance Measurement Circuit for Semiconductor Devices
- 1.13 Original Abstract Submitted
MEMORY DEVICE AND OPERATION THEREOF
Organization Name
Yangtze Memory Technologies Co., Ltd.
Inventor(s)
MEMORY DEVICE AND OPERATION THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 18595909 titled 'MEMORY DEVICE AND OPERATION THEREOF
Simplified Explanation
The patent application describes a circuit with a voltage generator and a sensing device. The voltage generator has two outputs, one for a word line voltage and the other for a flag signal indicating a relationship with a reference signal. The sensing device measures capacitance changes in word line loading based on the flag signal.
- The circuit includes a voltage generator with two outputs.
- One output provides a word line voltage, while the other gives a flag signal.
- The sensing device measures capacitance changes in word line loading based on the flag signal.
Key Features and Innovation
- Voltage generator with two outputs for word line voltage and flag signal.
- Sensing device measures capacitance changes in word line loading.
- Relationship between word line voltage and reference signal indicated by flag signal.
Potential Applications
This technology could be used in memory circuits, logic circuits, and other semiconductor devices where precise voltage control and capacitance measurement are crucial.
Problems Solved
- Provides a way to monitor and control capacitance changes in word line loading.
- Enables accurate measurement of voltage relationships in circuits.
Benefits
- Improved performance and reliability in semiconductor devices.
- Enhanced control over voltage levels and capacitance changes.
Commercial Applications
Title: Voltage Control and Capacitance Measurement Circuit for Semiconductor Devices This technology could be applied in the semiconductor industry for memory chips, processors, and other integrated circuits requiring precise voltage control and capacitance measurement. It could also be valuable in research and development for semiconductor manufacturing.
Prior Art
Readers interested in prior art related to this technology could explore patents and research papers in the field of semiconductor device design, voltage control circuits, and capacitance measurement techniques.
Frequently Updated Research
Researchers in the semiconductor industry are continuously exploring new methods for improving voltage control and capacitance measurement in integrated circuits. Stay updated on the latest advancements in this field to leverage cutting-edge technology for your applications.
Questions about Voltage Control and Capacitance Measurement Circuit for Semiconductor Devices
1. How does this circuit improve voltage control in semiconductor devices? 2. What are the potential applications of this technology in the semiconductor industry?
Original Abstract Submitted
A circuit includes a voltage generator and a sensing device. The voltage generator includes a first output and a second output. The first output is configured to output a word line voltage, and the second output is configured to output a flag signal indicates a relationship between the word line voltage and a reference signal. The sensing device includes a first input and a third output. The first input is coupled to the second output of the voltage generator, and the third output of the sensing device is configured to output a value corresponding to capacitance change of word line capacitance loading based on the flag signal.
