18595878. SEMICONDUCTOR LIGHT-RECEIVING DEVICE simplified abstract (Sumitomo Electric Industries, Ltd.)
Contents
SEMICONDUCTOR LIGHT-RECEIVING DEVICE
Organization Name
Sumitomo Electric Industries, Ltd.
Inventor(s)
Takashi Kato of Osaka-shi (JP)
Yasuhiro Iguchi of Osaka-shi (JP)
SEMICONDUCTOR LIGHT-RECEIVING DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18595878 titled 'SEMICONDUCTOR LIGHT-RECEIVING DEVICE
The semiconductor light-receiving device described in the abstract consists of several layers including an indium phosphide substrate, n-type and p-type III-V compound semiconductor layers, an optical absorption layer, a hole barrier layer, and an electron barrier layer.
- The device features an indium phosphide substrate as the base material.
- It includes a first III-V compound semiconductor layer of n-type and a second III-V compound semiconductor layer of p-type.
- An optical absorption layer is positioned between the first and second III-V compound semiconductor layers.
- A hole barrier layer is placed between the first III-V compound semiconductor layer and the optical absorption layer.
- An electron barrier layer is situated between the second III-V compound semiconductor layer and the optical absorption layer.
Potential Applications: - This technology can be used in photodetectors, solar cells, and other light-receiving devices. - It may find applications in telecommunications, imaging systems, and optical sensors.
Problems Solved: - Enhances the efficiency and performance of light-receiving devices. - Improves the absorption of light and separation of charge carriers.
Benefits: - Increased sensitivity and responsiveness in light detection. - Enhanced energy conversion efficiency in solar cells. - Improved overall performance and reliability of light-receiving devices.
Commercial Applications: Title: Advanced Semiconductor Light-Receiving Device for Enhanced Performance This technology can be commercialized in industries such as telecommunications, renewable energy, and optical sensing. It offers improved functionality and efficiency in various applications, making it a valuable asset for companies looking to enhance their products.
Questions about Semiconductor Light-Receiving Devices: 1. How does the use of III-V compound semiconductor layers impact the performance of the device? - The III-V compound semiconductor layers play a crucial role in determining the electrical and optical properties of the device, influencing its overall efficiency and sensitivity to light. 2. What are the key advantages of incorporating barrier layers in the design of the semiconductor light-receiving device? - Barrier layers help in controlling the flow of charge carriers within the device, reducing recombination losses and improving the overall performance of the light-receiving device.
Original Abstract Submitted
A semiconductor light-receiving device includes an indium phosphide substrate, a first III-V compound semiconductor layer of n-type, a second III-V compound semiconductor layer of p-type, an optical absorption layer disposed between the first III-V compound semiconductor layer and the second III-V compound semiconductor layer, a hole barrier layer disposed between the first III-V compound semiconductor layer and the optical absorption layer, and an electron barrier layer disposed between the second III-V compound semiconductor layer and the optical absorption layer. The first III-V compound semiconductor layer is disposed between the indium phosphide substrate and the optical absorption layer.
