18595869. MEMORY DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

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MEMORY DEVICE

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Meng-Sheng Chang of Hsinchu County (TW)

Chia-En Huang of Hsinchu County (TW)

Yi-Ching Liu of Hsinchu City (TW)

Yih Wang of Hsinchu City (TW)

MEMORY DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18595869 titled 'MEMORY DEVICE

Simplified Explanation:

The memory device described in the patent application consists of multiple arrays connected in parallel. One array includes switches and memory cells arranged in columns, with data lines connecting the memory cells. A switch in the array is responsible for transmitting data signals to a sense amplifier.

  • The memory device has multiple arrays connected in parallel.
  • Each array contains switches and memory cells arranged in columns.
  • Data lines connect the memory cells within each array.
  • A switch in the array is used to transmit data signals to a sense amplifier.

Key Features and Innovation:

  • Parallel connection of multiple arrays.
  • Organization of memory cells in columns within each array.
  • Use of switches to control data transmission to a sense amplifier.

Potential Applications:

The technology described in the patent application could be used in various memory storage devices, such as solid-state drives, computer memory modules, and other electronic devices requiring fast and efficient data storage and retrieval.

Problems Solved:

This technology addresses the need for high-speed data storage and retrieval in electronic devices, improving overall performance and efficiency.

Benefits:

  • Faster data storage and retrieval.
  • Enhanced performance of electronic devices.
  • Efficient use of memory space.

Commercial Applications:

Potential commercial applications of this technology include the development of faster and more reliable solid-state drives, computer memory modules, and other electronic devices requiring high-speed data storage capabilities. This innovation could lead to improved performance and efficiency in various industries, such as data storage, computing, and telecommunications.

Questions about Memory Device Technology:

1. How does the parallel connection of multiple arrays improve data storage and retrieval speed? 2. What are the potential commercial implications of using this technology in electronic devices?


Original Abstract Submitted

A memory device includes a plurality of arrays coupled in parallel with each other. A first array of the plurality of arrays includes a first switch and a plurality of first memory cells that are arranged in a first column, a second switch and a plurality of second memory cells that are arranged in a second column, and at least one data line coupled to the plurality of first memory cells and the plurality of second memory cells. The second switch is configured to output a data signal from the at least one data line to a sense amplifier.