18595737. SEMICONDUCTOR MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Ji Young Kim of Hwaseong-si (KR)
Woo Sung Yang of Gwangmyeong-si (KR)
Sung-Min Hwang of Hwaseong-si (KR)
Suk Kang Sung of Seongnam-si (KR)
Joon-Sung Lim of Seongnam-si (KR)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18595737 titled 'SEMICONDUCTOR MEMORY DEVICE
The semiconductor memory device described in the abstract consists of multiple stacked structures with supporter layers and cut patterns separating them.
- The first stacked structure includes a first and second stack, while the second stacked structure includes a third and fourth stack separated by a block cut structure.
- The first supporter layer is on the first and second stack, while the second supporter layer is on the third and fourth stack.
- Cut patterns, including first and second connections on the block cut structure, connect the supporter layers to the respective stacks.
Potential Applications: This technology could be used in various memory storage devices, such as solid-state drives, smartphones, and digital cameras.
Problems Solved: This innovation addresses the need for efficient and compact semiconductor memory devices with improved performance and reliability.
Benefits: The benefits of this technology include increased memory storage capacity, faster data access speeds, and enhanced durability of the memory device.
Commercial Applications: This technology has significant commercial potential in the consumer electronics industry, particularly in the development of high-performance storage solutions for various devices.
Prior Art: Researchers interested in this technology may want to explore prior patents related to semiconductor memory devices, stacked structures, and supporter layers.
Frequently Updated Research: Stay informed about the latest advancements in semiconductor memory technology, including developments in stacked structures and supporter layers.
Questions about Semiconductor Memory Devices: 1. How does the use of stacked structures improve the performance of semiconductor memory devices? 2. What are the key differences between this innovative memory device and traditional memory storage solutions?
Original Abstract Submitted
A semiconductor memory device includes a first stacked structure, a first supporter layer, a second stacked structure, a block cut structure, and a second supporter layer on the second stacked structure and separated by a second cut pattern. The first stacked structure includes a first and second stack, the second stacked structure includes a third stack separated by the block cut structure and a fourth stack, the first supporter layer is on the first stack and the second stack, the second supporter layer is on the third stack and the fourth stack, the first cut pattern includes a first connection on the block cut structure and connecting the first supporter layer and the second stack, and the second cut pattern of the second supporter layer includes a second connection on the block cut structure and connecting the second supporter layer placed on the third stack and the fourth stack.
