18595696. SEMICONDUCTOR DEVICES HAVING VARIOUSLY-SHAPED SOURCE/DRAIN PATTERNS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
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SEMICONDUCTOR DEVICES HAVING VARIOUSLY-SHAPED SOURCE/DRAIN PATTERNS
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SEMICONDUCTOR DEVICES HAVING VARIOUSLY-SHAPED SOURCE/DRAIN PATTERNS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18595696 titled 'SEMICONDUCTOR DEVICES HAVING VARIOUSLY-SHAPED SOURCE/DRAIN PATTERNS
The semiconductor device described in the abstract consists of multiple active patterns on a substrate, with a device isolation layer defining these patterns, a gate electrode spanning across them, and a source/drain pattern on top.
- The active patterns include a first and a second active pattern, with the source/drain pattern having three parts - one on each active pattern and a third part extending along the upper portion of the first active pattern.
- The device isolation layer features a first outer segment on the sidewall of the first active pattern below the source/drain pattern.
- The lowermost level of the third part of the source/drain pattern is lower than the uppermost level of the first outer segment on the first active pattern.
Potential Applications: - This technology can be utilized in the manufacturing of advanced semiconductor devices for various electronic applications. - It can enhance the performance and efficiency of integrated circuits in electronic devices such as smartphones, computers, and other consumer electronics.
Problems Solved: - Provides improved device isolation and source/drain pattern design for better functionality and performance of semiconductor devices. - Enhances the overall efficiency and reliability of integrated circuits in electronic devices.
Benefits: - Increased performance and efficiency of semiconductor devices. - Enhanced reliability and functionality of integrated circuits. - Improved manufacturing processes for advanced electronic applications.
Commercial Applications: Title: Advanced Semiconductor Device Technology for Enhanced Electronic Applications This technology can be commercially applied in the production of high-performance electronic devices, leading to improved functionality and reliability in consumer electronics, telecommunications equipment, and other electronic systems.
Questions about Semiconductor Device Technology: 1. How does the design of the source/drain pattern contribute to the overall performance of the semiconductor device?
- The source/drain pattern design plays a crucial role in ensuring efficient electrical conductivity and signal transmission within the device, ultimately enhancing its performance.
2. What are the key advantages of using multiple active patterns in semiconductor devices?
- Multiple active patterns allow for more complex circuitry and functionality to be integrated into the device, leading to improved performance and versatility.
Original Abstract Submitted
A semiconductor device comprising a plurality of active patterns on a substrate. The semiconductor device may include a device isolation layer defining the plurality of active patterns, a gate electrode extending across the plurality of active patterns, and a source/drain pattern on the active patterns. The plurality of active patterns may comprise a first active pattern and a second active pattern. The source/drain pattern comprises a first part on the first active pattern, a second part on the second active pattern, and a third part extending from the first part and along an upper portion of the first active pattern. The device isolation layer comprises a first outer segment on a sidewall of the first active pattern below the source/drain pattern. A lowermost level of a bottom surface of the third part may be lower than an uppermost level of a top surface of the first outer segment.
