18595666. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18595666 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract includes a semiconductor substrate, gate structures, and a diffusion brake in a trench.
- The device has gate structures spaced apart in one direction and extending in another direction.
- A single diffusion brake is located between the gate structures in a trench with insulating materials.
- The diffusion brake includes lower insulating material, an insulating liner, and upper insulating material.
Potential Applications: - This technology can be used in the manufacturing of advanced semiconductor devices. - It can improve the performance and efficiency of electronic devices.
Problems Solved: - Helps in reducing leakage current in semiconductor devices. - Enhances the overall functionality and reliability of electronic components.
Benefits: - Improved performance and efficiency of semiconductor devices. - Enhanced reliability and durability of electronic products.
Commercial Applications: - This technology can be utilized in the production of high-performance electronic devices such as smartphones, computers, and tablets.
Questions about the technology: 1. How does the diffusion brake help in reducing leakage current in semiconductor devices? 2. What are the specific advantages of using insulating materials in the diffusion brake?
Frequently Updated Research: - Stay updated on the latest advancements in semiconductor technology to further enhance the performance of electronic devices.
Original Abstract Submitted
A semiconductor device includes a semiconductor substrate, a plurality of gate structures which are spaced apart from each other in a first horizontal direction on the semiconductor substrate and extend in a second horizontal direction perpendicular to the first horizontal direction, and a single diffusion brake which extends in the second horizontal direction between the plurality of gate structures and is located in a first trench having a first depth in a vertical direction. The single diffusion brake includes a lower insulating material film conformally disposed on a side wall of the first trench, an insulating liner extending onto upper surfaces of the plurality of gate structures along an inner wall of the lower insulating material film, and an upper insulating material film disposed on the insulating liner and filling the inside of the first trench.
