18595629. SEMICONDUCTOR DEVICE simplified abstract (Semiconductor Energy Laboratory Co., Ltd.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Semiconductor Energy Laboratory Co., Ltd.
Inventor(s)
Shunpei Yamazaki of Setagaya (JP)
Daisuke Matsubayashi of Atsugi (JP)
Keisuke Murayama of Chigasaki (JP)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18595629 titled 'SEMICONDUCTOR DEVICE
The abstract of the patent application describes a transistor with oxide semiconductor stacked layers, gate electrode layers, and insulating layers for controlling the threshold voltage and maintaining normally-off characteristics.
- The transistor features oxide semiconductor stacked layers with a thinner channel formation region.
- One of the gate electrode layers acts as a back gate for threshold voltage control.
- The potential applied to the back gate allows easy adjustment of the transistor's threshold voltage.
Potential Applications: This technology can be applied in the development of advanced electronic devices such as high-performance transistors for integrated circuits, sensors, and displays.
Problems Solved: The technology addresses the need for precise control of threshold voltage in transistors to maintain their normally-off characteristics and improve overall performance.
Benefits: Improved control of threshold voltage Enhanced performance of electronic devices Maintained normally-off characteristics
Commercial Applications: Title: Advanced Transistor Technology for High-Performance Electronics This technology can be utilized in the production of high-performance electronic devices, leading to advancements in the semiconductor industry and various consumer electronics markets.
Prior Art: Researchers can explore prior studies on oxide semiconductor transistors, gate electrode designs, and threshold voltage control mechanisms to understand the evolution of this technology.
Frequently Updated Research: Ongoing research focuses on optimizing the design and materials used in oxide semiconductor transistors to further enhance their performance and functionality.
Questions about Transistor Technology: 1. How does the back gate in this transistor technology contribute to threshold voltage control? The back gate in the transistor technology allows for easy adjustment of the threshold voltage by controlling the potential applied to it.
2. What are the potential applications of this advanced transistor technology beyond integrated circuits? This technology can also be applied in sensors, displays, and other electronic devices that require precise control of threshold voltage for improved performance.
Original Abstract Submitted
A transistor includes oxide semiconductor stacked layers between a first gate electrode layer and a second gate electrode layer through an insulating layer interposed between the first gate electrode layer and the oxide semiconductor stacked layers and an insulating layer interposed between the second gate electrode layer and the oxide semiconductor stacked layers. The thickness of a channel formation region is smaller than the other regions in the oxide semiconductor stacked layers. Further in this transistor, one of the gate electrode layers is provided as what is called a back gate for controlling the threshold voltage. Controlling the potential applied to the back gate enables control of the threshold voltage of the transistor, which makes it easy to maintain the normally-off characteristics of the transistor.
