18595542. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR DEVICES
Organization Name
Inventor(s)
Jaehyeoung Ma of Suwon-si (KR)
SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18595542 titled 'SEMICONDUCTOR DEVICES
The abstract of this patent application describes semiconductor devices with specific patterns and structures on a substrate. Here is a simplified explanation of the abstract:
- First and second active patterns are aligned along a certain direction on a substrate, separated by a trench.
- A channel pattern with semiconductor patterns and a dummy gate electrode is stacked on the first active pattern.
- A gate spacer is placed on one side of the dummy gate electrode, covering a sidewall of the first active pattern.
Key Features and Innovation:
- Alignment of active patterns along a specific direction.
- Use of a trench to separate active patterns.
- Stacking of semiconductor patterns on the first active pattern.
- Placement of a gate spacer on one side of the dummy gate electrode.
Potential Applications:
- Semiconductor manufacturing
- Integrated circuits
- Electronic devices
Problems Solved:
- Enhancing semiconductor device performance
- Improving manufacturing processes
Benefits:
- Increased efficiency in semiconductor device production
- Enhanced functionality of electronic devices
Commercial Applications:
- This technology can be used in the production of various electronic devices, leading to improved performance and functionality in the market.
Questions about Semiconductor Devices: 1. How does the alignment of active patterns impact semiconductor device performance? 2. What are the advantages of using a trench to separate active patterns in semiconductor devices?
Frequently Updated Research:
- Stay updated on the latest advancements in semiconductor manufacturing techniques and materials to enhance the performance of these devices.
Original Abstract Submitted
Semiconductor devices and methods of forming the same are provided. Semiconductor devices may include first and second active patterns on a substrate. Each of the first and second active patterns may extend in a first direction. The first and second active patterns may be aligned along the first direction and may be separated by a first trench extending in a second direction. The first trench may define a first sidewall of the first active pattern. The semiconductor devices may also include a channel pattern including first and second semiconductor patterns stacked on the first active pattern, a dummy gate electrode on the channel pattern and extending in the second direction, and a gate spacer on one side of the dummy gate electrode, the one side of the dummy gate electrode being adjacent to the first trench. The gate spacer may cover a first sidewall of the first active pattern.
