18595374. SEGMENTED FORMATION OF GATE INTERFACE simplified abstract (Applied Materials, Inc.)
Contents
SEGMENTED FORMATION OF GATE INTERFACE
Organization Name
Inventor(s)
Steven C. H. Hung of Sunnyvale CA (US)
Theresa Kramer Guarini of San Jose CA (US)
Johanes F. Swenberg of Los Gatos CA (US)
SEGMENTED FORMATION OF GATE INTERFACE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18595374 titled 'SEGMENTED FORMATION OF GATE INTERFACE
The method described in the abstract involves depositing high-K dielectric layers on a substrate, forming an interfacial layer, inserting nitrogen atoms, and passivating chemical bonds through various processes.
- First deposition process to deposit a first high-K dielectric layer
- Interface formation process to form an interfacial layer
- Second deposition process to deposit a second high-K dielectric layer
- Plasma nitridation process to insert nitrogen atoms
- Anneal process to passivate chemical bonds
Potential Applications: - Semiconductor manufacturing - Integrated circuit fabrication - Nanotechnology research
Problems Solved: - Enhancing dielectric properties - Improving performance of semiconductor devices
Benefits: - Increased efficiency in semiconductor structures - Enhanced electrical properties - Better reliability and stability in electronic devices
Commercial Applications: Title: Advanced Semiconductor Structure Formation Technology This technology can be used in the production of high-performance electronic devices, leading to improved consumer electronics, telecommunications equipment, and industrial machinery.
Questions about Semiconductor Structure Formation: 1. How does the insertion of nitrogen atoms impact the dielectric properties of the high-K layers?
- The insertion of nitrogen atoms helps improve the electrical performance and reliability of the semiconductor structure.
2. What are the key advantages of using high-K dielectric layers in semiconductor manufacturing?
- High-K dielectric layers offer higher capacitance, lower leakage currents, and improved device performance compared to traditional materials.
Original Abstract Submitted
A method of forming a semiconductor structure includes performing a first deposition process to deposit a first high-K dielectric layer on a surface of a substrate, performing an interface formation process to form an interfacial layer on the surface of the substrate, performing a second deposition process to deposit a second high-K dielectric layer on the interfacial layer, performing a plasma nitridation process to insert nitrogen atoms in the first high-K dielectric layer and the second high-K dielectric layer, and performing an anneal process to passivate chemical bonds in the first high-K dielectric layer and the second high-K dielectric layer.
