18595323. SEMICONDUCTOR STORAGE DEVICE simplified abstract (Kioxia Corporation)
Contents
SEMICONDUCTOR STORAGE DEVICE
Organization Name
Inventor(s)
Daisaburo Takashima of Yokohama Kanagawa (JP)
SEMICONDUCTOR STORAGE DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18595323 titled 'SEMICONDUCTOR STORAGE DEVICE
The semiconductor storage device described in the patent application consists of a stacked body with multiple conductive layers separated by insulating layers, as well as a columnar structure extending in the stacking direction within the body.
- The columnar structure includes a variable-resistance film, a semiconductor film, an insulating film, and a resistor film, all aligned in the stacking direction.
- Memory cells are formed at the intersections of the conductive layers, variable-resistance film, and semiconductor film.
- In each memory cell, the resistor film is thicker than the variable-resistance film.
Potential Applications: - This technology could be used in high-density memory storage devices. - It may find applications in advanced computing systems requiring fast and reliable data storage.
Problems Solved: - Provides a more efficient and compact way to store data in semiconductor devices. - Offers improved performance and reliability compared to traditional storage methods.
Benefits: - Increased data storage capacity in a smaller footprint. - Enhanced data processing speeds and efficiency. - Improved durability and longevity of semiconductor storage devices.
Commercial Applications: Title: Advanced Semiconductor Storage Devices for High-Performance Computing This technology could be utilized in data centers, supercomputers, and other high-performance computing systems to enhance data storage capabilities and processing speeds.
Questions about Semiconductor Storage Devices: 1. How does the thickness of the resistor film impact the performance of the memory cells? - The thickness of the resistor film affects the resistance levels and overall functionality of the memory cells, influencing data storage and retrieval processes.
2. What are the potential challenges in implementing this technology in commercial semiconductor devices? - Some challenges may include manufacturing complexities, cost considerations, and compatibility with existing systems.
Original Abstract Submitted
A semiconductor storage device includes a stacked body having a plurality of conductive layers stacked in a stacking direction with an insulating layer interposed therebetween, and a columnar structure that extends in the stacking direction in the stacked body. The columnar structure has a variable-resistance film, a semiconductor film, an insulating film, and a resistor film, all of which extend in the stacking direction in the stacked body. The semiconductor film is between the variable-resistance film and the conductive layer. The insulating film is between the semiconductor film and the conductive layer. The resistor film is between the variable-resistance film and the semiconductor film. Memory cells are formed at locations where the conductive layers, the variable-resistance film, and the semiconductor film intersect. In each of the memory cells, the thickness of the resistor film is greater than the thickness of the variable-resistance film.
