18594864. METAL-INSULATOR-METAL STRUCTURE AND METHODS OF FABRICATION THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

METAL-INSULATOR-METAL STRUCTURE AND METHODS OF FABRICATION THEREOF

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Chih-Fan Huang of Kaohsiung City (TW)

Hung-Chao Kao of Taipei City (TW)

Yuan-Yang Hsiao of Taipei (TW)

Tsung-Chieh Hsiao of Changhua County (TW)

Hsiang-Ku Shen of Hsinchu City (TW)

Hui-Chi Chen of Hsinchu County (TW)

Dian-Hau Chen of Hsinchu (TW)

Yen-Ming Chen of Hsin-Chu County (TW)

METAL-INSULATOR-METAL STRUCTURE AND METHODS OF FABRICATION THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 18594864 titled 'METAL-INSULATOR-METAL STRUCTURE AND METHODS OF FABRICATION THEREOF

The semiconductor device described in the patent application includes a multi-layer interconnect structure, a dielectric layer, and a metal-insulator-metal (MIM) capacitor.

• The MIM capacitor consists of a bottom electrode, a top electrode, and an insulating layer between them.
• The bottom electrode has a slanted sidewall, while the top electrode has a vertical sidewall.
• The insulating layer covers the slanted sidewall of the bottom electrode.

Potential Applications:

• This technology can be used in advanced semiconductor devices for improved performance and efficiency.
• It can be applied in various electronic devices that require high-capacity capacitors.

Problems Solved:

• This innovation addresses the need for high-performance capacitors in semiconductor devices.
• It provides a solution for optimizing space utilization and enhancing overall device functionality.

Benefits:

• Improved performance and efficiency in semiconductor devices.
• Enhanced capacitance and reliability.
• Space-saving design for compact electronic devices.

Commercial Applications:

• This technology can be utilized in the manufacturing of smartphones, tablets, laptops, and other consumer electronics.
• It has potential applications in the automotive industry for advanced electronic systems.

Prior Art: Prior research in the field of semiconductor devices and capacitor technology can provide valuable insights into the development of this innovation.

Frequently Updated Research: Stay updated on the latest advancements in semiconductor technology and capacitor design to further enhance the capabilities of this innovation.

Questions about the Semiconductor Device: 1. How does the slanted sidewall of the bottom electrode contribute to the performance of the MIM capacitor? 2. What are the key advantages of using a metal-insulator-metal capacitor in semiconductor devices?

Original Abstract Submitted

The present disclosure is directed to a semiconductor device. The semiconductor device includes a multi-layer interconnect structure disposed over a substrate, a dielectric layer disposed over the multi-layer interconnect structure, and a metal-insulator-metal (MIM) capacitor disposed over the dielectric layer. The MIM capacitor includes a bottom electrode disposed on a top surface of the dielectric layer, a top electrode disposed above the bottom electrode, and an insulating layer interposed between the bottom electrode and the top electrode. The bottom electrode has a slanted sidewall with respect to the top surface of the dielectric layer. The top electrode has a vertical sidewall with respect to the top surface of the dielectric layer. The insulating layer covers the slanted sidewall of the bottom electrode.