18594735. INTEGRATED CIRCUIT STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
INTEGRATED CIRCUIT STRUCTURE
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Kuei-Ming Chang of New Taipei (TW)
INTEGRATED CIRCUIT STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18594735 titled 'INTEGRATED CIRCUIT STRUCTURE
Simplified Explanation: The patent application describes a device with two transistors and a dielectric structure between them. The width of the dielectric structure increases from the bottom to a higher position, where it is wider than the first gate structure.
- The device includes a first transistor and a second transistor.
- A dielectric structure is positioned between the first and second transistors.
- The width of the dielectric structure increases from the bottom to a higher position.
- The first gate structure is narrower than the dielectric structure at the higher position.
Key Features and Innovation:
- Unique dielectric structure design with increasing width.
- Optimization of gate structure width for improved performance.
- Potential for enhanced transistor functionality and efficiency.
Potential Applications:
- Semiconductor devices.
- Integrated circuits.
- Electronics manufacturing.
Problems Solved:
- Improved transistor performance.
- Enhanced efficiency in electronic devices.
- Potential for miniaturization of components.
Benefits:
- Increased functionality of transistors.
- Improved overall performance of electronic devices.
- Potential for cost-effective manufacturing processes.
Commercial Applications: Commercializing this technology could lead to advancements in semiconductor manufacturing, potentially impacting industries such as consumer electronics, telecommunications, and computing.
Prior Art: Readers interested in prior art related to this technology may explore patents and research papers on semiconductor device design, transistor structures, and dielectric materials.
Frequently Updated Research: Stay informed about the latest developments in semiconductor technology, transistor design, and dielectric materials research to understand the evolving landscape of this field.
Questions about the Technology: 1. What are the potential implications of this technology on the semiconductor industry? 2. How does the unique dielectric structure contribute to the performance of the transistors?
Original Abstract Submitted
A device includes a first transistor, a second transistor, and a dielectric structure. The first transistor is over a substrate and has a first gate structure. The second transistor is over the substrate and has a second gate structure. The dielectric structure is between the first gate structure and the second gate structure. The dielectric structure has a width increasing from a bottom position of the dielectric structure to a first position higher than the bottom position of the dielectric structure. A width of the first gate structure is less than the width of the dielectric structure at the first position.
