18593661. SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

SEMICONDUCTOR DEVICE

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Kuo-Cheng Ching of Hsinchu County (TW)

Ching-Wei Tsai of Hsinchu City (TW)

Kuan-Lun Cheng of Hsinchu City (TW)

Chih-Hao Wang of Hsinchu County (TW)

SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18593661 titled 'SEMICONDUCTOR DEVICE

The semiconductor device described in the abstract includes a semiconductor fin, a gate structure, and a dielectric isolation plug.

• The semiconductor fin extends above a substrate and consists of a silicon germanium layer and a silicon layer.
• The gate structure crosses the semiconductor fin perpendicularly.
• The dielectric isolation plug extends from the top surface of the silicon layer into the silicon germanium layer.

Potential Applications: - This technology can be used in the manufacturing of advanced semiconductor devices for various electronic applications. - It can improve the performance and efficiency of integrated circuits in electronic devices.

Problems Solved: - Enhances the isolation and performance of semiconductor devices. - Allows for the creation of smaller and more efficient electronic components.

Benefits: - Improved performance and efficiency of electronic devices. - Enables the development of smaller and more powerful semiconductor devices.

Commercial Applications: - This technology can be utilized in the production of smartphones, computers, and other electronic devices to enhance their performance and functionality.

Questions about the technology: 1. How does the dielectric isolation plug improve the performance of the semiconductor device? 2. What are the potential challenges in implementing this technology in mass production?

Frequently Updated Research: - Stay updated on the latest advancements in semiconductor technology to understand how this innovation fits into the current landscape.

Original Abstract Submitted

A semiconductor device includes a semiconductor fin, a gate structure, and a dielectric isolation plug. The semiconductor fin extends along a first direction above a substrate and includes a silicon germanium layer and a silicon layer over the silicon germanium layer. The gate structure extends across the semiconductor fin along a second direction perpendicular to the first direction. The dielectric isolation plug extends downwardly from a top surface of the silicon layer into the silicon germanium layer when viewed in a cross section taken along the first direction.