18593467. VERTICAL MEMORY DEVICES simplified abstract (YANGTZE MEMORY TECHNOLOGIES CO., LTD.)
Contents
VERTICAL MEMORY DEVICES
Organization Name
YANGTZE MEMORY TECHNOLOGIES CO., LTD.
Inventor(s)
VERTICAL MEMORY DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18593467 titled 'VERTICAL MEMORY DEVICES
The abstract describes a semiconductor device and method involving the formation of a stack of layers on a substrate, including sacrificial layers, conductive layers, gate layers, and insulating layers. A staircase is formed in a staircase region adjacent to an array region, with channel structures formed in the array region. The source sacrificial layer is replaced with a source layer in connection with the channel layer, forming a common source layer. The gate sacrificial layers are replaced with gate layers, and a first contact structure is formed in the staircase region to connect with the common source layer.
- Formation of a stack of layers on a substrate
- Creation of a staircase and channel structures in specific regions
- Replacement of sacrificial layers with functional layers
- Formation of a common source layer
- Creation of a first contact structure for connectivity
Potential Applications: - Semiconductor manufacturing - Integrated circuits - Electronics industry
Problems Solved: - Efficient semiconductor device fabrication - Improved connectivity and functionality - Enhanced performance of electronic devices
Benefits: - Increased device efficiency - Enhanced connectivity - Improved overall performance
Commercial Applications: Title: "Advanced Semiconductor Device Fabrication for Enhanced Connectivity" This technology can be applied in the production of high-performance electronic devices, leading to improved functionality and connectivity. The market implications include the potential for more advanced and efficient semiconductor devices in various industries.
Questions about Semiconductor Device Fabrication: 1. How does the formation of a common source layer impact the functionality of the semiconductor device? - The common source layer allows for improved connectivity and performance of the device by ensuring a direct connection between the source and channel layers. 2. What are the key advantages of using a staircase structure in semiconductor device fabrication? - The staircase structure allows for precise control and optimization of different regions within the device, leading to enhanced functionality and performance.
Original Abstract Submitted
Aspects of the disclosure provide a semiconductor device and method. An example method include forming a stack of layers on a substrate, the stack of layers including a source sacrificial layer, a conductive layer, gate sacrificial layers and insulating layers; forming a staircase into the stack of layers in a staircase region that is adjacent to an array region; forming channel structures in the array region, a channel structure including a channel layer surrounded by one or more insulating layers and extending into the stack of layers; replacing the source sacrificial layer with a source layer in conductive connection with the channel layer, the source layer and the conductive layer forming a common source layer; replacing the gate sacrificial layers with gate layers; and forming a first contact structure in the staircase region, the first contact structure forming a conductive connection with the common source layer.
