18593293. MAGNETIC MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
MAGNETIC MEMORY DEVICE
Organization Name
Inventor(s)
Jeong-Heon Park of Hwaseong-si (KR)
YoungJun Cho of Hwaseong-si (KR)
Joonmyoung Lee of Gwacheon-si (KR)
Junho Jeong of Hwaseong-si (KR)
MAGNETIC MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18593293 titled 'MAGNETIC MEMORY DEVICE
The patent application describes a magnetic memory device with a unique structure involving stacked magnetic patterns and non-magnetic materials.
- The device includes a pinned magnetic pattern and a free magnetic pattern stacked on a substrate.
- A tunnel barrier pattern is situated between the pinned and free magnetic patterns.
- A top electrode is placed on the free magnetic pattern, with a capping pattern between the free magnetic pattern and the electrode.
- The capping pattern consists of a lower capping pattern, an upper capping pattern, a first non-magnetic pattern, and a second non-magnetic pattern.
- The lower and upper capping patterns contain non-magnetic metals, while the first and second non-magnetic patterns consist of different metals.
Potential Applications: - Data storage devices - Magnetic sensors - Spintronics applications
Problems Solved: - Enhanced magnetic memory performance - Improved data retention and stability
Benefits: - Increased data storage capacity - Higher data transfer speeds - Enhanced device reliability
Commercial Applications: Title: Advanced Magnetic Memory Devices for Next-Generation Data Storage This technology can be utilized in the development of high-performance data storage devices for various industries, including telecommunications, computing, and consumer electronics.
Questions about the technology: 1. How does the use of different metals in the non-magnetic patterns impact the device's performance? 2. What are the potential challenges in scaling up this technology for mass production?
Original Abstract Submitted
Disclosed is a magnetic memory device including a pinned magnetic pattern and a free magnetic pattern that are sequentially stacked on a substrate, a tunnel barrier pattern between the pinned magnetic pattern and the free magnetic pattern, a top electrode on the free magnetic pattern, and a capping pattern between the free magnetic pattern and the top electrode. The capping pattern includes a lower capping pattern, an upper capping pattern between the lower capping pattern and the top electrode, a first non-magnetic pattern between the lower capping pattern and the upper capping pattern, and a second non-magnetic pattern between the first non-magnetic pattern and the upper capping pattern. Each of the lower capping pattern and the upper capping pattern includes a non-magnetic metal. The first non-magnetic pattern and the second non-magnetic pattern include different metals from each other.
