18593280. RADIATION DETECTOR AND RADIATION IMAGING SYSTEM simplified abstract (CANON KABUSHIKI KAISHA)

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RADIATION DETECTOR AND RADIATION IMAGING SYSTEM

Organization Name

CANON KABUSHIKI KAISHA

Inventor(s)

KUNIHITO Ide of Kanagawa (JP)

RADIATION DETECTOR AND RADIATION IMAGING SYSTEM - A simplified explanation of the abstract

This abstract first appeared for US patent application 18593280 titled 'RADIATION DETECTOR AND RADIATION IMAGING SYSTEM

The abstract describes a radiation detector with a semiconductor layer containing a detection region and a peripheral region, supported by two support members.

  • The radiation detector includes a semiconductor layer with a detection region and a peripheral region.
  • A first support member supports part of the peripheral region on the surface of the semiconductor layer.
  • A second support member supports part of the first support member from the opposite side of the semiconductor layer.
  • The distance between the support members and the boundary of the detection region is crucial for the detector's functionality.

Potential Applications: - Radiation monitoring in nuclear facilities - Medical imaging devices - Security screening equipment

Problems Solved: - Accurate detection of radiation levels - Structural support for the semiconductor layer

Benefits: - Enhanced radiation detection capabilities - Improved durability and stability of the detector

Commercial Applications: Title: Advanced Radiation Detection Technology for Various Industries This technology can be utilized in industries such as healthcare, security, and nuclear power for efficient radiation detection and monitoring.

Questions about Radiation Detector Technology: 1. How does the positioning of the support members impact the performance of the radiation detector?

  The positioning of the support members ensures stability and accuracy in radiation detection by maintaining the integrity of the semiconductor layer.

2. What are the key advantages of using a semiconductor layer in radiation detectors?

  Semiconductor layers offer high sensitivity to radiation and can be tailored for specific detection requirements.


Original Abstract Submitted

A radiation detector includes a semiconductor layer including a detection region and a peripheral region provided outside the detection region, a first support member configured to support at least a part of the peripheral region in a surface of the semiconductor layer, and a second support member configured to support a part of the first support member from a side opposite to the semiconductor layer. A point at a side surface of the first support member is defined as EP, and a point at a side surface of the second support member is defined as EP, the EP is spaced apart from a boundary between the detection region and the peripheral region by a first distance, and the EP is spaced apart from the boundary between the detection region and the peripheral region by a second distance larger than the first distance.