18591935. MEMORY DEVICE simplified abstract (SK hynix Inc.)
Contents
MEMORY DEVICE
Organization Name
Inventor(s)
Seung Hwan Kim of Gyeonggikl-do (KR)
MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18591935 titled 'MEMORY DEVICE
The memory device described in the patent application consists of a word line stack with word lines stacked alternately vertically over a substrate, supported by vertical supporters and connected to contact plugs. Active layers are positioned between the word lines in a horizontal orientation intersecting with the word lines.
- Word line stack with alternating vertical stacking over a substrate
- Vertical supporters for supporting the edge portion of the word line stack
- Contact plugs electrically connected to the word lines
- Active layers positioned horizontally between the word lines
Potential Applications: - Memory devices - Semiconductor technology - Integrated circuits
Problems Solved: - Efficient memory storage - Improved electrical connectivity - Space-saving design
Benefits: - Increased memory capacity - Enhanced performance - Compact and reliable design
Commercial Applications: Title: Innovative Memory Device for Advanced Electronics This technology can be utilized in various electronic devices such as smartphones, computers, and servers, improving their memory storage and performance.
Questions about Memory Device: 1. How does the word line stack configuration improve memory device efficiency? 2. What are the advantages of having active layers positioned horizontally between the word lines?
Original Abstract Submitted
A memory device includes: a word line stack including word lines that are alternately stacked vertically over a substrate, and having an edge portion; at least one supporter extending vertically in a direction that the word lines are stacked and supporting the edge portion of the word line stack; contact plugs that are electrically connected to the word lines at the edge portion of the word line stack; and active layers positioned between the word lines, and horizontally oriented in a direction intersecting with the word lines.
