18591687. SEMICONDUCTOR DEVICE INCLUDING GATE SEPARATION REGION simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
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SEMICONDUCTOR DEVICE INCLUDING GATE SEPARATION REGION
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SEMICONDUCTOR DEVICE INCLUDING GATE SEPARATION REGION - A simplified explanation of the abstract
This abstract first appeared for US patent application 18591687 titled 'SEMICONDUCTOR DEVICE INCLUDING GATE SEPARATION REGION
The semiconductor device described in the abstract includes a gate separation region, isolation region, interlayer insulating layers, and gate line structures.
- The gate separation region consists of a gap fill layer and a buffer structure.
- The buffer structure includes a buffer liner between the gap fill layer and the isolation region, as well as between the end portions of the gate line structures and the side surfaces of the gap fill layer.
- The gate separation region is positioned between the end portions of the gate line structures facing each other and the interlayer insulating layers.
Potential Applications: - This technology can be used in the manufacturing of advanced semiconductor devices with improved performance and reliability. - It can be applied in various electronic devices such as smartphones, tablets, and computers.
Problems Solved: - Enhances the isolation between active regions in semiconductor devices. - Improves the overall efficiency and functionality of the devices.
Benefits: - Increased performance and reliability of semiconductor devices. - Enhanced isolation capabilities leading to better device operation. - Potential for smaller and more efficient electronic devices.
Commercial Applications: Title: Advanced Semiconductor Device Technology for Enhanced Performance This technology can be utilized in the production of high-performance electronic devices, leading to improved market competitiveness and consumer satisfaction.
Prior Art: Readers can explore prior patents related to semiconductor device manufacturing processes, gate separation regions, and isolation techniques to gain a deeper understanding of the technology.
Frequently Updated Research: Stay updated on the latest advancements in semiconductor device technology, gate separation regions, and isolation techniques to remain at the forefront of innovation in the industry.
Questions about Semiconductor Device Technology: 1. How does the gate separation region contribute to the overall performance of semiconductor devices? 2. What are the key differences between this technology and previous methods of isolation in semiconductor devices?
Original Abstract Submitted
A semiconductor device including a gate separation region is provided. The semiconductor device includes an isolation region between active regions; interlayer insulating layers on the isolation region; gate line structures overlapping the active regions, disposed on the isolation region, and having end portions facing each other; and a gate separation region disposed on the isolation region, and disposed between the end portions of the gate line structures facing each other and between the interlayer insulating layers. The gate separation region comprises a gap fill layer and a buffer structure, the buffer structure includes a buffer liner disposed between the gap fill layer and the isolation region, between the end portions of the gate line structures facing each other and side surfaces of the gap fill layer, and between the interlayer insulating layers and the side surfaces of the gap fill layer.
