18591336. SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND RECORDING MEDIUM simplified abstract (Kokusai Electric Corporation)
Contents
SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND RECORDING MEDIUM
Organization Name
Inventor(s)
Naofumi Ohashi of Toyama-shi (JP)
SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND RECORDING MEDIUM - A simplified explanation of the abstract
This abstract first appeared for US patent application 18591336 titled 'SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND RECORDING MEDIUM
The abstract describes a patent application for a processing chamber that can form films on both surfaces of a substrate by supplying different film-forming gases to the front and back surfaces of the substrate, heating the substrate, and controlling the process with a controller.
- The processing chamber can form films on both surfaces of a substrate simultaneously.
- A first gas supply mechanism supplies a film-forming gas to the front surface of the substrate, while a second gas supply mechanism supplies a different film-forming gas to the back surface.
- A substrate heating table heats the substrate during the film formation process.
- A lifting/lowering mechanism moves the substrate between positions for transfer and processing.
- The controller manages the gas supply mechanisms, heating table, and lifting/lowering mechanism to control the film formation process.
Potential Applications: - Semiconductor manufacturing - Thin film deposition for electronic devices - Solar cell production
Problems Solved: - Simultaneous film formation on both sides of a substrate - Efficient heating and control of film formation process
Benefits: - Increased productivity in film deposition processes - Enhanced quality and uniformity of films - Energy-efficient substrate heating
Commercial Applications: Title: Advanced Thin Film Deposition System for Semiconductor Manufacturing This technology can revolutionize the semiconductor industry by enabling faster and more precise thin film deposition processes, leading to improved device performance and production efficiency.
Questions about the technology: 1. How does this technology improve the efficiency of thin film deposition processes? - This technology allows for simultaneous film formation on both sides of a substrate, reducing processing time and improving overall productivity. 2. What are the potential cost savings associated with using this advanced processing chamber? - By optimizing the film formation process and enhancing control mechanisms, this technology can lead to reduced material waste and energy consumption, resulting in cost savings for manufacturers.
Original Abstract Submitted
A processing chamber that processes a substrate; a first gas supply mechanism that supplies a first film-forming gas to a front surface of the substrate; a second gas supply mechanism that supplies a second film-forming gas to a back surface of the substrate; a substrate heating table that heats the substrate in the processing chamber; a lifting/lowering mechanism that lifts and lowers the substrate between a first position where the substrate can be transferred into and out of the processing chamber and a second position which is closer to the substrate heating table than the first position and where the substrate is not in contact with the substrate heating table; and a controller capable of controlling the first and second gas supply mechanisms, the substrate heating table, and the lifting/lowering mechanism so as to form films on both surfaces of the substrate while heating the substrate at the second position.
