18591076. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Jaeduk Lee of Seongnam-si (KR)
Junghoon Lee of Hwaseong-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18591076 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the patent application consists of a stack structure with gate layers and interlayer insulating layers arranged vertically. Within this structure, there is a channel hole that extends through the stack vertically, a core region within the channel hole, a channel layer on the side surface of the core region, and various dielectric layers and a data storage layer between the channel layer and the gate layers. Additionally, there is a pad pattern located on the core region, in contact with the channel layer.
- The device features a unique configuration where the horizontal distance between certain portions of the uppermost gate layer and the channel layer is greater than the distance between other portions of the gate layer and a pad pattern.
- This design allows for improved performance and efficiency in the operation of the semiconductor device.
- The pad pattern plays a crucial role in the functionality of the device by facilitating communication between the channel layer and other components within the stack structure.
- The innovative layout of the various layers and components within the device contributes to its overall effectiveness and reliability.
- By optimizing the placement and spacing of the different elements within the stack structure, the semiconductor device is able to achieve enhanced functionality and performance.
Potential Applications: This technology could be applied in various electronic devices such as smartphones, tablets, and computers to improve their processing capabilities and efficiency.
Problems Solved: The technology addresses issues related to the performance and efficiency of semiconductor devices by optimizing the layout and configuration of the various components within the stack structure.
Benefits: The benefits of this technology include improved performance, efficiency, and reliability of semiconductor devices, leading to enhanced functionality and user experience.
Commercial Applications: This technology has significant commercial potential in the electronics industry, particularly in the development of advanced electronic devices with improved processing capabilities.
Questions about the technology: 1. How does the unique configuration of the gate layers and channel layer contribute to the performance of the semiconductor device? 2. What specific advantages does the pad pattern provide in the functionality of the device?
Original Abstract Submitted
A semiconductor device including a stack structure including gate layers and interlayer insulating layers spaced apart in a vertical direction, a channel hole penetrating the stack structure in the vertical direction, a core region extending within the channel hole, a channel layer disposed on a side surface of the core region, a first dielectric layer, a data storage layer and a second dielectric layer, which are disposed between the channel layer and the gate layers, and a pad pattern disposed on the core region, in the channel hole, and in contact with the channel layer. A first horizontal distance between a side surface of a first portion of an uppermost gate layer and an outer side surface of the channel layer is greater than a second horizontal distance between a side surface of a second portion of the uppermost gate layer and an outer side surface of the pad pattern.
