18590282. FERROELECTRIC CAPACITORS, TRANSISTORS, MEMORY DEVICES, AND METHODS OF MANUFACTURING FERROELECTRIC DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
FERROELECTRIC CAPACITORS, TRANSISTORS, MEMORY DEVICES, AND METHODS OF MANUFACTURING FERROELECTRIC DEVICES
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FERROELECTRIC CAPACITORS, TRANSISTORS, MEMORY DEVICES, AND METHODS OF MANUFACTURING FERROELECTRIC DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18590282 titled 'FERROELECTRIC CAPACITORS, TRANSISTORS, MEMORY DEVICES, AND METHODS OF MANUFACTURING FERROELECTRIC DEVICES
The present invention pertains to ferroelectric capacitors, transistors, memory devices, and methods of manufacturing ferroelectric devices. The ferroelectric capacitor consists of a first electrode, a second electrode facing the first electrode, a ferroelectric layer between the first electrode and the second electrode, and an interfacial layer between the ferroelectric layer and the first electrode or between the ferroelectric layer and the second electrode. The ferroelectric layer contains hafnium-based oxide, while the interfacial layer contains HfO.
- Ferroelectric capacitor with hafnium-based oxide in the ferroelectric layer
- Interfacial layer containing HfO
- Suitable for use in transistors and memory devices
- Method of manufacturing ferroelectric devices with improved performance
- Addresses issues related to ferroelectric materials and interfaces
Potential Applications: - Advanced electronics - Memory storage devices - High-performance computing
Problems Solved: - Enhancing the performance of ferroelectric devices - Improving the reliability of memory storage - Addressing issues with ferroelectric materials and interfaces
Benefits: - Increased efficiency in electronic devices - Enhanced memory storage capabilities - Improved overall device performance
Commercial Applications: Title: Advanced Ferroelectric Devices for High-Performance Electronics This technology could be utilized in the development of next-generation electronic devices, memory storage solutions, and high-performance computing systems. The market implications include improved efficiency, reliability, and performance in various electronic applications.
Questions about Ferroelectric Capacitors: 1. How does the use of hafnium-based oxide in the ferroelectric layer improve device performance? 2. What are the potential commercial applications of this technology in the electronics industry?
Frequently Updated Research: Stay updated on the latest advancements in ferroelectric materials and device manufacturing techniques to ensure optimal performance and reliability in electronic applications.
Original Abstract Submitted
The present invention relates to ferroelectric capacitors, transistors, memory device, and method of manufacturing ferroelectric devices. The ferroelectric capacitor includes a first electrode, a second electrode facing the first electrode, a ferroelectric layer between the first electrode and the second electrode, and an interfacial layer between the ferroelectric layer and the first electrode or between the ferroelectric layer and the second electrode. The ferroelectric layer includes hafnium-based oxide. The interfacial layer includes HfO.
