18589286. SEMICONDUCTOR DEVICE MANUFACTURING METHOD simplified abstract (Kioxia Corporation)
Contents
SEMICONDUCTOR DEVICE MANUFACTURING METHOD
Organization Name
Inventor(s)
Masaya Toda of Yokkaichi Mie (JP)
Kazuhiro Matsuo of Kuwana Mie (JP)
Kota Takahashi of Latham NY (US)
Kenichiro Toratani of Fujisawa Kanagawa (JP)
Wakako Moriyama of Yokohama Kanagawa (JP)
SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A simplified explanation of the abstract
This abstract first appeared for US patent application 18589286 titled 'SEMICONDUCTOR DEVICE MANUFACTURING METHOD
The semiconductor device manufacturing method involves transferring a substrate with exposed indium and metal surfaces to a film forming device chamber.
- Indium reducing gas is supplied at a specific temperature to transition indium to a gaseous state.
- Film forming gas is then supplied at a higher temperature to form a film on both surfaces.
- The process results in the formation of a first film on the exposed surfaces of the substrate.
Potential Applications: - Semiconductor manufacturing - Thin film deposition processes
Problems Solved: - Efficient deposition of films on substrates with multiple exposed surfaces - Controlled transition of indium to a gaseous state
Benefits: - Improved film quality - Enhanced semiconductor device performance
Commercial Applications: Title: Advanced Semiconductor Manufacturing Method This technology can be used in the production of various semiconductor devices, leading to improved performance and reliability in electronics.
Prior Art: Researchers can explore prior studies on thin film deposition processes and semiconductor manufacturing methods to understand the evolution of this technology.
Frequently Updated Research: Researchers are constantly exploring new methods to enhance thin film deposition processes and semiconductor device manufacturing for improved performance and efficiency.
Questions about Semiconductor Device Manufacturing Method: 1. How does the use of indium reducing gas impact the film formation process?
- The indium reducing gas helps transition indium to a gaseous state, facilitating the deposition of a film on the substrate surfaces.
2. What are the key advantages of using a film forming gas at a higher temperature?
- Using a film forming gas at a higher temperature ensures the formation of a uniform and high-quality film on the substrate surfaces.
Original Abstract Submitted
A semiconductor device manufacturing method includes transferring a substrate including a structure that has a first surface at which indium is exposed, and a second surface at which a metal is exposed, to a chamber of a film forming device, supplying an indium reducing gas to the chamber at a first temperature at which indium is able to transition to a gaseous state, and supplying a film forming gas to the chamber at a second temperature higher than the first temperature to form a first film on the first surface and the second surface, after supplying the reducing gas.
